High-Performance Dual-Gate Carbon Nanotube Ion-Sensitive Field Effect Transistor With High-$\kappa$ Top Gate and Low-$\kappa$ Bottom Gate Dielectrics

2019 ◽  
Vol 19 (14) ◽  
pp. 5692-5699 ◽  
Author(s):  
Jiten Chandra Dutta ◽  
Hiranya Ranjan Thakur ◽  
Gaurav Keshwani
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Dual Gate ◽  
Effect Transistor ◽  
Bottom Gate

High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics

2015 ◽  
Vol 117 (16) ◽  
pp. 164308 ◽  
Author(s):  
Haolei Qian ◽  
Yewu Wang ◽  
Yanjun Fang ◽  
Lin Gu ◽  
Ren Lu ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Zno Nanowire ◽  
Effect Transistor

scholarly journals Comparison of Duplex and Quadruplex Folding Structure Adenosine Aptamers for Carbon Nanotube Field Effect Transistor Aptasensors

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2280
Author(s):  
Hong Phan T. Nguyen ◽  
Thanihaichelvan Murugathas ◽  
Natalie O. V. Plank
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Dissociation Constants ◽  
High Sensitivity ◽  
Quadruplex Structure ◽  
G Quadruplex ◽  
Effect Transistor ◽  
Folding Structure

Carbon nanotube field effect transistor (CNT FET) aptasensors have been investigated for the detection of adenosine using two different aptamer sequences, a 35-mer and a 27-mer. We found limits of detection for adenosine of 100 pM and 320 nM for the 35-mer and 27-mer aptamers, with dissociation constants of 1.2 nM and 160 nM, respectively. Upon analyte recognition the 35-mer adenosine aptamer adopts a compact G-quadruplex structure while the 27-mer adenosine aptamer changes to a folded duplex. Using the CNT FET aptasensor platform adenosine could be detected with high sensitivity over the range of 100 pM to 10 µM, highlighting the suitability of the CNT FET aptasensor platform for high performance adenosine detection. The aptamer restructuring format is critical for high sensitivity with the G-quadraplex aptasensor having a 130-fold smaller dissociation constant than the duplex forming aptasensor.

Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectrics

2012 ◽  
Vol 98 ◽  
pp. 343-346 ◽  
Author(s):  
Zongni Yao ◽  
Weijie Sun ◽  
Wuxia Li ◽  
Haifang Yang ◽  
Junjie Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Zno Nanowire ◽  
High K ◽  
Dual Gate ◽  
Effect Transistor
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