High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Journal of Applied Physics ◽

10.1063/1.3140614 ◽

2009 ◽

Vol 105 (11) ◽

pp. 114510 ◽

Author(s):

A. Pérez-Tomás ◽

M. Placidi ◽

X. Perpiñà ◽

A. Constant ◽

P. Godignon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Modeling ◽

Channel Mobility ◽

Inversion Channel ◽

Effect Transistor

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Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2538 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2538-2543 ◽

Author(s):

Daisuke Kosemura ◽

Yasuto Kakemura ◽

Tetsuya Yoshida ◽

Atsushi Ogura ◽

Masayuki Kohno ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1201 ◽

2001 ◽

Vol 40 (Part 2, No. 11B) ◽

pp. L1201-L1203 ◽

Author(s):

Junji Senzaki ◽

Kazutoshi Kojima ◽

Shinsuke Harada ◽

Ryoji Kosugi ◽

Seiji Suzuki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Inversion Channel ◽

Effect Transistor

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High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.3462303 ◽

2010 ◽

Vol 97 (1) ◽

pp. 012106 ◽

Author(s):

J. J. Gu ◽

Y. Q. Liu ◽

M. Xu ◽

G. K. Celler ◽

R. G. Gordon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Thermally Grown

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Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2969282 ◽

2008 ◽

Vol 93 (5) ◽

pp. 053504 ◽

Author(s):

Y. C. Chang ◽

W. H. Chang ◽

H. C. Chiu ◽

L. T. Tung ◽

C. H. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.1520 ◽

2006 ◽

Vol 45 (3A) ◽

pp. 1520-1524

Author(s):

Yao-Jen Lee ◽

Pei-Tsang Ho ◽

Wen-Luh Yang ◽

Tien-Sheng Chao ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

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Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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MoS₂/dielectric stack optimization for high performance metal-oxide-semiconductor field-effect transistor

10.14711/thesis-991012637367703412 ◽

2018 ◽

Author(s):

Yaoqiao Hu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics

Journal of Electronic Materials ◽

10.1007/s11664-001-0165-1 ◽

2001 ◽

Vol 30 (12) ◽

pp. 1499-1505 ◽

Author(s):

Veena Misra ◽

Manoj Kulkarni ◽

Huicai Zhong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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