Core-Shell Junctionless Nanotube Tunnel Field Effect Transistor: Design and Sensitivity Analysis for Biosensing Application

IEEE Sensors Journal ◽

10.1109/jsen.2019.2944885 ◽

2020 ◽

Vol 20 (2) ◽

pp. 672-679 ◽

Author(s):

Shruti Shreya ◽

Adnan Hamid Khan ◽

Naveen Kumar ◽

S. Intekhab Amin ◽

Sunny Anand

Keyword(s):

Sensitivity Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Performance optimization of a nanotube core–shell semi-junctionless p+p+n heterojunction tunnel field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-020-01776-6 ◽

2020 ◽

Author(s):

Zahra Ahangari

Keyword(s):

Performance Optimization ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Performance investigation of steep-slope core–shell nanotube indium nitride electron–hole bilayer tunnel field effect transistor

Applied Physics A ◽

10.1007/s00339-019-2700-z ◽

2019 ◽

Vol 125 (6) ◽

Author(s):

Zahra Ahangari

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Indium Nitride ◽

Steep Slope ◽

Electron Hole ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Design and Sensitivity Analysis of Steep-Slope Bi-Channel Vertical Tunnel Field Effect Transistor

Silicon ◽

10.1007/s12633-020-00579-y ◽

2020 ◽

Author(s):

Zahra Ahangari ◽

Somaye Mahmodi

Keyword(s):

Sensitivity Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Steep Slope ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Charge Plasma Based Vertical Nanowire Tunnel Field Effect Transistor: Design and Sensitivity Analysis for Biosensing Application

Silicon ◽

10.1007/s12633-021-01512-7 ◽

2021 ◽

Author(s):

Himanshu Bharadwaj ◽

Naveen Kumar ◽

S. Intekhab Amin ◽

Sunny Anand

Keyword(s):

Sensitivity Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Charge Plasma ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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(Invited) Homogeneous and Heterogeneous Material Based Nanotube Tunnel Field Effect Transistor with Core-Shell Gate Stacks

ECS Meeting Abstracts ◽

10.1149/ma2018-02/16/710 ◽

2018 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Heterogeneous Material ◽

Gate Stacks ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Temperature sensitivity analysis of polarity controlled electrostatically doped tunnel field-effect transistor

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.07.023 ◽

2016 ◽

Vol 97 ◽

pp. 598-605 ◽

Author(s):

Kaushal Nigam ◽

Sunil Pandey ◽

P.N. Kondekar ◽

Dheeraj Sharma

Keyword(s):

Sensitivity Analysis ◽

Temperature Sensitivity ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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InGaAs-InP core–shell nanowire/Si junction for vertical tunnel field-effect transistor

Applied Physics Letters ◽

10.1063/5.0014565 ◽

2020 ◽

Vol 117 (12) ◽

pp. 123501

Author(s):

Katsuhiro Tomioka ◽

Fumiya Ishizaka ◽

Junichi Motohisa ◽

Takashi Fukui

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Circuit Performance and Sensitivity Analysis of Charge Plasma Based Super-Steep Negative Capacitance Junctionless Tunnel Field Effect Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2017.2042 ◽

2017 ◽

Vol 12 (5) ◽

pp. 442-451 ◽

Author(s):

Sangeeta Singh ◽

P. N. Kondekar

Keyword(s):

Sensitivity Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Negative Capacitance ◽

Circuit Performance ◽

Charge Plasma ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications

72nd Device Research Conference ◽

10.1109/drc.2014.6872328 ◽

2014 ◽

Author(s):

Bahram Ganjipour ◽

Ofogh Tizno ◽

Magnus Heurlin ◽

Magnus T. Borgstrom ◽

Claes Thelander ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Tunnel Diodes ◽

Junction Solar Cell ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

IET Circuits Devices & Systems ◽

10.1049/cds2.12064 ◽

2021 ◽

Author(s):

Apoorva ◽

Naveen Kumar ◽

S. Intekhab Amin ◽

Sunny Anand

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Capacitance ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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