ABSTRACTThis paper describes in detail a surface preparation, and post-etch removal
technique developed for InGaAs sidewalls. It illustrates the results
demonstrating the effect of sidewall post-etch, surface preparation, and
surface passivation on the performance of high speed InGaAs detectors. Dark
current density for circular diodes with a diameter size varying between 10
and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness
of various surface preparation techniques was studied by measuring the
immediate improvement in dark current density, as well as its long-term
stability. The benefits of this new technique compared to other techniques
we have investigated include improved device characteristics, long-term
stability, as well as a much less critical process to achieve optimum
surface properties.
Low Dark Current and High Speed InGaAs Photodiode on CMOS-Compatible Silicon by Heteroepitaxy
