A Novel Surface Preparation and Post-Etch Removal Technique for InGaAs Sidewalls

1997 ◽  
Vol 477 ◽  
Author(s):  
S. A. Tabatabaei ◽  
G. A. Porkolab ◽  
S. Agarwala ◽  
F. G. Johnson ◽  
S. A. Merritt ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
High Speed ◽  
Surface Preparation ◽  
Reverse Bias Voltage ◽  
Dark Current Density ◽  
Term Stability ◽  
Long Term Stability ◽  
Removal Technique

ABSTRACTThis paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparation, and surface passivation on the performance of high speed InGaAs detectors. Dark current density for circular diodes with a diameter size varying between 10 and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness of various surface preparation techniques was studied by measuring the immediate improvement in dark current density, as well as its long-term stability. The benefits of this new technique compared to other techniques we have investigated include improved device characteristics, long-term stability, as well as a much less critical process to achieve optimum surface properties.

Improved performance of GaSb-based MIR photodetectors through electrochemical passivation in sulphur containing solutions

2004 ◽  
Vol 829 ◽  
Author(s):  
A. Piotrowska ◽  
E. Papis ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
E. Kaminska ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Differential Resistance ◽  
Dark Current Density ◽  
Long Term Stability ◽  
Sulfur Passivation ◽  
Side Walls ◽  
Improved Performance ◽  
Electrochemical Passivation

ABSTRACTSulfur passivation effects on the performance of LPE-grown GaSb/InGaAsSb/AlGaAsSb mesatype photodiodes operating in wavelengths range 1.9 – 2.3 μm have been investigated. (NH4)2S, Na2S, and (NH2)2CS have been chosen as sulfur sources in either aqueous or C3H7OH solutions. Electrochemical passivation of mesa side walls was proven to reduce photodiodes dark current and increasing their differential resistance by a factor of 4. As a result devices characterized by the detectivity of 1.5–2×1010 cmHz1/2/W and dark current density of 20 mA/cm2 at –0.5V bias have been fabricated and their long-term stability has been proven.

A carbon nanotube field emission cathode with high current density and long-term stability

2009 ◽  
Vol 20 (32) ◽  
pp. 325707 ◽  
Author(s):  
Xiomara Calderón-Colón ◽  
Huaizhi Geng ◽  
Bo Gao ◽  
Lei An ◽  
Guohua Cao ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Field Emission Cathode ◽  
Term Stability ◽  
Long Term Stability ◽  
Emission Cathode

scholarly journals Фотодиоды для ближней инфракрасной области спектра на основе GaSb/GaAlAsSb-гетероструктур

2018 ◽  
Vol 52 (9) ◽  
pp. 1094
Author(s):  
Е.В. Куницына ◽  
И.А. Андреев ◽  
Г.Г. Коновалов ◽  
Э.В. Иванов ◽  
А.А. Пивоварова ◽  
...  
Keyword(s):  
Active Region ◽  
Response Time ◽  
Current Density ◽  
Dark Current ◽  
High Speed ◽  
Sensitive Area ◽  
Dark Current Density ◽  
Performance Response ◽  
Speed Performance ◽  
Unique Method

AbstractGaSb/GaAlAsSb uncooled photodiodes for the 1 . 1–1 . 85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 10^15 cm^–3. The capacitance of the photodiodes is 70–110 pF for a sensitive -area diameter of 300 μm and 150–250 pF for a diameter of 500 μm. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity S _λ = 0 . 95 A/W at the maximum, a relatively low reverse dark current density j = (4–9) × 10^–3 A/cm^2 at U _rev = 1 . 0–2 . 0 V, and high-speed performance (response time 5–10 ns).

Semiconductor Photodetectors

2020 ◽  
pp. 527-584
Author(s):  
Vurgaftman Igor
Keyword(s):  
Current Density ◽  
Dark Current ◽  
High Speed ◽  
Resonant Cavity ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Quantum Well Infrared Photodetectors ◽  
Photovoltaic Detectors ◽  
Lower Responsivity

This chapter describes the operating principles of photoconductive and photovoltaic detectors based on III–V semiconductors. The electrical characteristics of both photodiodes and majority carrier barrier structures are discussed starting with the diffusion equation. The chapter outlines the figures of merit used to evaluate the performance of infrared photodetectors including the responsivity, dark current density, and normalized detectivity. It discusses bulk-like and type II superlattice photodetectors and how the multistage arrangement of interband cascade detectors (ICDs) can reduce the dark current density at the expense of a lower responsivity. Detectors that employ intersubband optical transitions, namely, quantum-well infrared photodetectors and quantum cascade detectors, are also discussed. The chapter considers how the dark-current density can be suppressed in resonant-cavity and thin waveguide-based detectors. It concludes with a discussion of the requirements for high-speed operation and an overview of novel types of detectors that draw their inspiration from III–V semiconductor devices.

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