A high current gain 4H-SiC NPN power bipolar junction transistor

2003 ◽  
Vol 24 (5) ◽  
pp. 327-329 ◽  
Author(s):  
Jianhui Zhang ◽  
Y. Luo ◽  
P. Alexandrov ◽  
L. Fursin ◽  
J.H. Zhao
Keyword(s):  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor

2006 ◽  
Vol 527-529 ◽  
pp. 1417-1420 ◽  
Author(s):  
Jian Hui Zhang ◽  
Jian Wu ◽  
Petre Alexandrov ◽  
Terry Burke ◽  
Kuang Sheng ◽  
...  
Keyword(s):  
High Power ◽  
Active Area ◽  
Current Gain ◽  
High Current ◽  
Theoretical Limit ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Blocking Voltage ◽  
Saturation Region ◽  
Junction Transistor

This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme. Near theoretical limit high blocking voltage of VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to 6.7x1015 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2 is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (JC=1252 A/cm2) at VCE=5.9 V in the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 m9·cm2. From VCE=2.4 V to VCE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 m9·cm2. The current gain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2, which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A verylarge area 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated.

High current gain 4H-SiC bipolar junction transistor

2016 ◽  
Vol 37 (4) ◽  
pp. 044005
Author(s):  
Yourun Zhang ◽  
Jinfei Shi ◽  
Ying Liu ◽  
Chengchun Sun ◽  
Fei Guo ◽  
...  
Keyword(s):  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer

2004 ◽  
Vol 457-460 ◽  
pp. 1173-1176 ◽  
Author(s):  
Jian Hui Zhao ◽  
Jian Hui Zhang ◽  
Petre Alexandrov ◽  
Larry X. Li ◽  
Terry Burke
Keyword(s):  
High Voltage ◽  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Drift Layer

A high current gain gate-controlled lateral bipolar junction transistor with 90nm CMOS technology for future RF SoC applications

2008 ◽  
Vol 52 (8) ◽  
pp. 1140-1144 ◽  
Author(s):  
Shuo-Mao Chen ◽  
Yean-Kuen Fang ◽  
Wen-Kuan Yeh ◽  
I.C. Lee ◽  
Yen-Ting Chiang
Keyword(s):  
Cmos Technology ◽  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

2009 ◽  
Vol 615-617 ◽  
pp. 821-824 ◽  
Author(s):  
Kenichi Nonaka ◽  
Akihiko Horiuchi ◽  
Yuki Negoro ◽  
Kensuke Iwanaga ◽  
Seiichi Yokoyama ◽  
...  
Keyword(s):  
Contact Region ◽  
Surface Recombination ◽  
Current Gain ◽  
Type Region ◽  
Bipolar Junction Transistor ◽  
Type Layer ◽  
Blocking Voltage ◽  
Junction Transistor ◽  
The Common ◽  
P Type

A new 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination structure: SSR-BJT has been proposed to improve the common emitter current gain which is one of the main issues for 4H-SiC BJTs. A Lightly Doped N-type layer (LDN-layer) between the emitter and base layers, and a High Resistive P-type region (HRP-region) formed between the emitter mesa edge and the base contact region were employed in the SSR-BJT. A fabricated SSR-BJT showed a maximum current gain of 134 at room temperature with a specific on-resistance of 3.2 mΩcm2 and a blocking voltage VCEO of 950 V. The SSR-BJT kept a current gain of 60 at 250°C with a specific on-resistance of 8 mΩcm2. To our knowledge, these current gains are the highest among 4H-SiC BJTs with a blocking voltage VCEO more than about 1000 V which have been ever reported.

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