A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
2004 ◽
Vol 457-460
◽
pp. 1173-1176
◽
Keyword(s):
Keyword(s):
2006 ◽
Vol 527-529
◽
pp. 1417-1420
◽
2003 ◽
Vol 24
(5)
◽
pp. 327-329
◽
2008 ◽
Vol 52
(8)
◽
pp. 1140-1144
◽
Keyword(s):
2010 ◽
Vol 130
(12)
◽
pp. 2188-2191
Keyword(s):
1956 ◽
Vol 1
(6)
◽
pp. 565-579
◽
1991 ◽
Vol 62
(4)
◽
pp. 1031-1036
◽
Keyword(s):