1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor

2006 ◽  
Vol 527-529 ◽  
pp. 1417-1420 ◽  
Author(s):  
Jian Hui Zhang ◽  
Jian Wu ◽  
Petre Alexandrov ◽  
Terry Burke ◽  
Kuang Sheng ◽  
...  
Keyword(s):  
High Power ◽  
Active Area ◽  
Current Gain ◽  
High Current ◽  
Theoretical Limit ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Blocking Voltage ◽  
Saturation Region ◽  
Junction Transistor

This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme. Near theoretical limit high blocking voltage of VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to 6.7x1015 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2 is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (JC=1252 A/cm2) at VCE=5.9 V in the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 m9·cm2. From VCE=2.4 V to VCE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 m9·cm2. The current gain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2, which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A verylarge area 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

2005 ◽  
Vol 483-485 ◽  
pp. 901-904 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Jim Richmond ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Voltage Drop ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
A Current

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

2009 ◽  
Vol 615-617 ◽  
pp. 821-824 ◽  
Author(s):  
Kenichi Nonaka ◽  
Akihiko Horiuchi ◽  
Yuki Negoro ◽  
Kensuke Iwanaga ◽  
Seiichi Yokoyama ◽  
...  
Keyword(s):  
Contact Region ◽  
Surface Recombination ◽  
Current Gain ◽  
Type Region ◽  
Bipolar Junction Transistor ◽  
Type Layer ◽  
Blocking Voltage ◽  
Junction Transistor ◽  
The Common ◽  
P Type

A new 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination structure: SSR-BJT has been proposed to improve the common emitter current gain which is one of the main issues for 4H-SiC BJTs. A Lightly Doped N-type layer (LDN-layer) between the emitter and base layers, and a High Resistive P-type region (HRP-region) formed between the emitter mesa edge and the base contact region were employed in the SSR-BJT. A fabricated SSR-BJT showed a maximum current gain of 134 at room temperature with a specific on-resistance of 3.2 mΩcm2 and a blocking voltage VCEO of 950 V. The SSR-BJT kept a current gain of 60 at 250°C with a specific on-resistance of 8 mΩcm2. To our knowledge, these current gains are the highest among 4H-SiC BJTs with a blocking voltage VCEO more than about 1000 V which have been ever reported.

High current gain 4H-SiC bipolar junction transistor

2016 ◽  
Vol 37 (4) ◽  
pp. 044005
Author(s):  
Yourun Zhang ◽  
Jinfei Shi ◽  
Ying Liu ◽  
Chengchun Sun ◽  
Fei Guo ◽  
...  
Keyword(s):  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

A high current gain 4H-SiC NPN power bipolar junction transistor

2003 ◽  
Vol 24 (5) ◽  
pp. 327-329 ◽  
Author(s):  
Jianhui Zhang ◽  
Y. Luo ◽  
P. Alexandrov ◽  
L. Fursin ◽  
J.H. Zhao
Keyword(s):  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Junction Transistor

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer

2004 ◽  
Vol 457-460 ◽  
pp. 1173-1176 ◽  
Author(s):  
Jian Hui Zhao ◽  
Jian Hui Zhang ◽  
Petre Alexandrov ◽  
Larry X. Li ◽  
Terry Burke
Keyword(s):  
High Voltage ◽  
Current Gain ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Drift Layer

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

2009 ◽  
Vol 615-617 ◽  
pp. 829-832 ◽  
Author(s):  
Jian Hui Zhang ◽  
Leonid Fursin ◽  
Xue Qing Li ◽  
Xiao Hui Wang ◽  
Jian Hui Zhao ◽  
...  
Keyword(s):  
High Performance ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Bipolar Junction Transistor ◽  
Blocking Voltage ◽  
Junction Transistor ◽  
Dc Current ◽  
Base Doping

This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base and emitter epi-layers continuously grown in the same reactor. The 4H-SiC BJTs were designed to improve the common emitter current gain through the built-in electrical fields originating from the grading of the base doping. Continuously-grown epi-layers are also believed to be the key to increasing carrier lifetime and high current gains. The 4H-SiC BJT wafer was grown in an Aixtron/Epigress VP508, a horizontal hot-wall chemical vapor deposition reactor using standard silane/propane chemistry and nitrogen and aluminum dopants. High performance 4H-SiC BJTs based on this initial non-optimized graded base doping have been demonstrated, including a 4H-SiC BJT with a DC current gain of ~33, specific on-resistance of 2.9 mcm2, and blocking voltage VCEO of over 1000 V.

scholarly journals Electrothermal Model of SiC Power BJT

Energies ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2617
Author(s):  
Joanna Patrzyk ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Gain Factor ◽  
Current Gain ◽  
Electrical Model ◽  
Modified Model ◽  
Bipolar Junction Transistor ◽  
Self Heating ◽  
Saturation Region ◽  
Junction Transistor ◽  
Temperature Impact ◽  
Research Show

This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.

scholarly journals Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

2020 ◽  
Vol 1004 ◽  
pp. 923-932
Author(s):  
Besar Asllani ◽  
Pascal Bevilacqua ◽  
Hervé Morel ◽  
Dominique Planson ◽  
Luong Viet Phung ◽  
...  
Keyword(s):  
Room Temperature ◽  
State Of The Art ◽  
High Current Density ◽  
Active Area ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Bipolar Junction Transistor ◽  
Turn On ◽  
Junction Transistor ◽  
Switching Characteristics

This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a βMax of 69. Double pulse tests reveal state of the art switching with very sharp dV/dt and di/dt. Turn-on is operated at less than 100 ns for an EON lower than 4mJ, whereas the turn-off takes longer times due to tail current resulting in EOFF of 17.2 mJ and 50 mJ for the single BJT and Darlington respectively when operated at high current density. Excellent parallelisation have been achieved.

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