Study on Time Constants of Random Telegraph Noise in Gate Leakage Current Through Hot-Carrier Stress Test

2010 ◽  
Vol 31 (9) ◽  
pp. 1029-1031 ◽  
Author(s):  
Heung-Jae Cho ◽  
Younghwan Son ◽  
Byoung-Chan Oh ◽  
Sanghoon Lee ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Leakage Current ◽  
Stress Test ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Random Telegraph Noise ◽  
Time Constants ◽  
Hot Carrier ◽  
Telegraph Noise ◽  
Hot Carrier Stress

Study on the Oxide Trap Distribution in a Thin Gate Oxide from Random Telegraph Noise in the Drain Current and the Gate Leakage Current

2011 ◽  
Vol 58 (5(2)) ◽  
pp. 1518-1521 ◽  
Author(s):  
Heung-Jae Cho ◽  
Younghwan Son ◽  
Sanghoon Lee ◽  
Jong-Ho Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Gate Oxide ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Oxide Trap ◽  
Thin Gate Oxide

scholarly journals Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

2018 ◽  
Vol 328 ◽  
pp. 30-34 ◽  
Author(s):  
Qi Wang ◽  
Yaomi Itoh ◽  
Tohru Tsuruoka ◽  
Masakazu Aono ◽  
Deyan He ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Leakage Current ◽  
Gate Bias ◽  
Gate Leakage Current ◽  
Gate Leakage
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