Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) ◽

10.1109/ipfa.2002.1025671 ◽

2003 ◽

Author(s):

Zhichun Wang ◽

J. Ackaert ◽

C. Salm ◽

E. De Backer ◽

G. van den Bosch ◽

...

Keyword(s):

Leakage Current ◽

Plasma Processing ◽

Gate Leakage Current ◽

Gate Leakage ◽

Oxide Breakdown ◽

Hot Carrier ◽

Hot Carrier Stress

Download Full-text

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

7th International Symposium on Plasma- and Process-Induced Damage ◽

10.1109/ppid.2002.1042605 ◽

2003 ◽

Author(s):

J. Ackaert ◽

Zhichun Wang ◽

E. De Backer ◽

C. Salm

Keyword(s):

Leakage Current ◽

Plasma Processing ◽

Gate Leakage Current ◽

Gate Leakage ◽

Oxide Breakdown ◽

Hot Carrier ◽

Hot Carrier Stress

Download Full-text

Study on Time Constants of Random Telegraph Noise in Gate Leakage Current Through Hot-Carrier Stress Test

IEEE Electron Device Letters ◽

10.1109/led.2010.2053694 ◽

2010 ◽

Vol 31 (9) ◽

pp. 1029-1031 ◽

Author(s):

Heung-Jae Cho ◽

Younghwan Son ◽

Byoung-Chan Oh ◽

Sanghoon Lee ◽

Jong-Ho Lee ◽

...

Keyword(s):

Leakage Current ◽

Stress Test ◽

Gate Leakage Current ◽

Gate Leakage ◽

Random Telegraph Noise ◽

Time Constants ◽

Hot Carrier ◽

Telegraph Noise ◽

Hot Carrier Stress

Download Full-text

Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated $\hbox{HfO}_{2}$ Gate-Oxide n-MOS Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2091453 ◽

2011 ◽

Vol 58 (2) ◽

pp. 562-566 ◽

Author(s):

Tackhwi Lee ◽

Sanjay K. Banerjee

Keyword(s):

Leakage Current ◽

Charge Trapping ◽

Gate Leakage Current ◽

Gate Leakage ◽

Download Full-text

Impact of boron penetration from s/-extension on gate leakage current and gate-oxide reliablity for 65-nmnode CMOS and beyond

International Meeting for Future of Electron Devices, 2004. ◽

10.1109/imfedk.2004.1566439 ◽

2006 ◽

Author(s):

T. Yamashita ◽

K. Shiga ◽

T. Hayashi ◽

H. Umeda ◽

H. Oda ◽

...

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Boron Penetration

Download Full-text

Stress-induced high-field gate leakage current in ultra-thin gate oxide

Solid-State Electronics ◽

10.1016/s0038-1101(00)00008-3 ◽

2000 ◽

Vol 44 (6) ◽

pp. 977-980 ◽

Author(s):

Jianlin Wei ◽

Lingfeng Mao ◽

Mingzhen Xu ◽

Changhua Tan ◽

Xiaorong Duan

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Thin Gate Oxide

Download Full-text

Improvement of direct-tunneling gate leakage current in ultra-thin gate oxide CMOS with TiN gate electrode using non-doped selective epitaxial Si channel technique

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824275 ◽

2003 ◽

Author(s):

H.S. Momose ◽

T. Ohguro ◽

E. Morifuji ◽

H. Sugaya ◽

S. Nakamura ◽

...

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gate Electrode ◽

Direct Tunneling ◽

Thin Gate Oxide

Download Full-text

Research on the Gate Leakage Current of PMOSFET with Ultra-thin Gate Oxide

Journal of Convergence Information Technology ◽

10.4156/jcit.vol7.issue11.6 ◽

2012 ◽

Vol 7 (11) ◽

pp. 44-51

Author(s):

Shigang HU ◽

Xiaofeng WU ◽

Zaifang XI

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Thin Gate Oxide

Download Full-text

GATE LEAKAGE CURRENT NOISE IN ULTRA-THIN GATE OXIDE MOSFET'S

Noise in Physical Systems and 1/F Fluctuations ◽

10.1142/9789812811165_0037 ◽

2001 ◽

Author(s):

J. H. LEE ◽

G. BOSMAN ◽

K. R. GREEN ◽

D. LADWIG

Keyword(s):

Leakage Current ◽

Current Noise ◽

Gate Leakage Current ◽

Gate Leakage ◽

Thin Gate Oxide

Download Full-text

Investigation of multistage linear region drain current degradation and gate-oxide breakdown under hot-carrier stress in BCD HV PMOS

2011 International Reliability Physics Symposium ◽

10.1109/irps.2011.5784515 ◽

2011 ◽

Author(s):

Yu-Hui Huang ◽

J.R. Shih ◽

C.C. Liu ◽

Y.-H. Lee ◽

R. Ranjan ◽

...

Keyword(s):

Drain Current ◽

Linear Region ◽

Oxide Breakdown ◽

Hot Carrier ◽

Hot Carrier Stress

Download Full-text

Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799307 ◽

2003 ◽

Author(s):

Zhiyi Han ◽

Chung-Kai Lin ◽

N. Goldsman ◽

I. Mayergoyz ◽

S. Yu ◽

...

Keyword(s):

Transport Equation ◽

Leakage Current ◽

Boltzmann Transport Equation ◽

Oxide Thickness ◽

Boltzmann Transport ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gate Oxide Thickness

Download Full-text