Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide
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2010 ◽
Vol 31
(9)
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pp. 1029-1031
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2011 ◽
Vol 58
(2)
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pp. 562-566
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2000 ◽
Vol 44
(6)
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pp. 977-980
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2012 ◽
Vol 7
(11)
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pp. 44-51
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