Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

2010 ◽  
Vol 13 (5-6) ◽  
pp. 320-324 ◽  
Author(s):  
Sang-Jin Jeon ◽  
Jong-Woong Chang ◽  
Kwang-Soo Choi ◽  
Jyoti Prakash Kar ◽  
Tae-Il Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Thin Film Transistors ◽  
Electrical Performance ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium

scholarly journals Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

2018 ◽  
Vol 6 (38) ◽  
pp. 10376-10376
Author(s):  
Hyukjoon Yoo ◽  
Young Jun Tak ◽  
Won-Gi Kim ◽  
Yeong-gyu Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

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