High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O as Gate Dielectric

2021 ◽  
Vol 42 (3) ◽  
pp. 339-342
Author(s):  
Chuan Yu Han ◽  
P. T. Lai ◽  
Wing Man Tang
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

scholarly journals High-performance organic thin-film transistor by using LaNbO as gate dielectric

2015 ◽  
Vol 107 (3) ◽  
pp. 033503 ◽  
Author(s):  
C. Y. Han ◽  
J. Q. Song ◽  
W. M. Tang ◽  
C. H. Leung ◽  
P. T. Lai
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Preparation of High-Performance Organic Thin-Film Transistor Through Surface Modification

2013 ◽  
Vol 28 (4) ◽  
pp. 490-494
Author(s):  
林广庆 LIN Guang-qing ◽  
李鹏 LI Peng ◽  
王明晖 WANG Ming-hui ◽  
冯翔 FENG Xiang ◽  
张俊 ZHANG Jun ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Modification ◽  
High Performance ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Organic Thin Film Transistor Using a Photo-Curable Organic/Inorganic Hybrid Material as a Gate Dielectric

2008 ◽  
Vol 8 (9) ◽  
pp. 4561-4564 ◽  
Author(s):  
Do-Hoon Hwang ◽  
Yong Suk Yang ◽  
Jeong-Ik Lee ◽  
Seong Hyun Kim ◽  
Oun-Ho Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dissipation Factor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Metal Insulator Metal ◽  
Oligomeric Silsesquioxane ◽  
Photo Acid Generator

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.

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