A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

2015 ◽  
Vol 62 (7) ◽  
pp. 2313-2319 ◽  
Author(s):  
Chuan Yu Han ◽  
Wing Man Tang ◽  
Cheung Hoi Leung ◽  
Chi-Ming Che ◽  
Peter T. Lai
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Organic Thin Film Transistor Using a Photo-Curable Organic/Inorganic Hybrid Material as a Gate Dielectric

2008 ◽  
Vol 8 (9) ◽  
pp. 4561-4564 ◽  
Author(s):  
Do-Hoon Hwang ◽  
Yong Suk Yang ◽  
Jeong-Ik Lee ◽  
Seong Hyun Kim ◽  
Oun-Ho Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dissipation Factor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Metal Insulator Metal ◽  
Oligomeric Silsesquioxane ◽  
Photo Acid Generator

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.

A New Top Gate Pentacene Organic Thin Film Transistor Employing Vapor Deposited Polyimide as A Gate Dielectric

2006 ◽  
Vol 937 ◽  
Author(s):  
Chang-Wook Han ◽  
Sang-Geun Park ◽  
Chang-Yeon Kim ◽  
Min-Koo Han ◽  
Gun-Woo Hyung ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Polyimide Film ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Ft Ir

ABSTRACTA top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm2/Vs as a mobility, about 103 as an on-off ratio (In/off), −7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope.

High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

2015 ◽  
Vol 107 (10) ◽  
pp. 103302 ◽  
Author(s):  
Amit Tewari ◽  
Srinivas Gandla ◽  
Anil Reddy Pininti ◽  
K. Karuppasamy ◽  
Siva Böhm ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor
Sign in / Sign up

Export Citation Format

Share Document