Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors

2021 ◽  
pp. 1-1
Author(s):  
Chihun Sung ◽  
Sooji Nam ◽  
Sung Haeng Cho
2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  

2016 ◽  
Vol 4 (47) ◽  
pp. 11298-11304 ◽  
Author(s):  
Sooji Nam ◽  
Jong-Heon Yang ◽  
Sung Haeng Cho ◽  
Ji Hun Choi ◽  
Oh-Sang Kwon ◽  
...  

The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.


2015 ◽  
Vol 8 (8) ◽  
pp. 081101 ◽  
Author(s):  
Keun Ho Lee ◽  
Jee Ho Park ◽  
Young Bum Yoo ◽  
Sun Woong Han ◽  
Se Jong Lee ◽  
...  

2015 ◽  
Vol 3 (24) ◽  
pp. 6276-6283 ◽  
Author(s):  
Jee Ho Park ◽  
Jin Young Oh ◽  
Hong Koo Baik ◽  
Tae Il Lee

Enhanced hydration lowers the dehydroxylation temperature of the sol–gel inks, resulting in high-performance metal oxide thin film transistors.


2013 ◽  
Vol 5 (7) ◽  
pp. 2585-2592 ◽  
Author(s):  
Keun Ho Lee ◽  
Jee Ho Park ◽  
Young Bum Yoo ◽  
Woo Soon Jang ◽  
Jin Young Oh ◽  
...  

2019 ◽  
Vol 7 (20) ◽  
pp. 6169-6177 ◽  
Author(s):  
Kun Liang ◽  
Yan Wang ◽  
Shuangshuang Shao ◽  
Manman Luo ◽  
Vincenzo Pecunia ◽  
...  

High-performance metal-oxide thin-film transistors, based on inkjet-printed self-confined bilayer heterojunction channels.


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