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High speed and precise ablation etching of wide band gap GaN semiconductor using high-intensity femtosecond laser
LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080)
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10.1109/leos.2000.893965
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2002
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Author(s):
K. Ozono
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M. Obara
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A. Usui
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H. Sunakawa
Keyword(s):
Femtosecond Laser
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Band Gap
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High Intensity
◽
High Speed
◽
Wide Band
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Wide Band Gap
Download Full-text
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