A low-threshold miniaturized single-mode nanowire laser operating at telecommunication wavelengths was proposed and simulated. The device was constructed by combining a single InGaAs nanowire with a photonic crystal microcavity and asymmetric distributed-Bragg-reflector mirrors. The mode characteristics and threshold properties were calculated using the three-dimensional finite-different time-domain method. Due to the effective subwavelength confinement and strong optical feedback, provided by the photonic crystal microcavity, and distributed-Bragg-reflector mirrors, respectively, the confinement factor, end-facet reflectivity, and quality factor significantly improved. A lowest threshold of ~80 cm−1 and ultra-small cut-off radius of ~40 nm are obtained, reduced by 67%, and 70%, respectively, compared with a traditional nanowire laser. In addition, due to the photonic band gap effect, single-mode lasing is achieved with a high side-mode suppression ratio of >12 dB. By placing several identical nanowires in the photonic crystal with different lattice constants, an on-chip laser array is realized, which is promising in wavelength division multiplexing applications. This work may pave the way for the development of low-threshold miniaturized nanolasers and low-consumption high-density photonic integrated circuits.
Emulating the local Kuramoto model with an injection-locked photonic crystal laser array