Patterned quantum dot lasers fabricated using electron beam lithography and selective area epitaxial growth

2005 ◽  
Author(s):  
V.C. Elarde ◽  
J.J. Coleman ◽  
A.C. Bryce
Keyword(s):  
Electron Beam ◽  
Quantum Dot ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Quantum Dot Lasers ◽  
Selective Area

scholarly journals Selective area intermixing of III–V quantum-dot lasers grown on silicon with two wavelength lasing emissions

2019 ◽  
Vol 34 (8) ◽  
pp. 085004 ◽  
Author(s):  
Mengya Liao ◽  
Wei Li ◽  
Mingchu Tang ◽  
Ang Li ◽  
Siming Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Selective Area

scholarly journals Patterned Quantum Dot Molecule Laser Fabricated by Electron Beam Lithography and Wet Chemical Etching

2010 ◽  
Vol 46 (12) ◽  
pp. 1827-1833 ◽  
Author(s):  
V. B. Verma ◽  
U. Reddy ◽  
N. L. Dias ◽  
K. P. Bassett ◽  
X. Li ◽  
...  
Keyword(s):  
Electron Beam ◽  
Quantum Dot ◽  
Electron Beam Lithography ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

2019 ◽  
Vol 40 (10) ◽  
pp. 101302 ◽  
Author(s):  
Shujie Pan ◽  
Victoria Cao ◽  
Mengya Liao ◽  
Ying Lu ◽  
Zizhuo Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Epitaxial Growth ◽  
Silicon Substrate ◽  
Recent Progress ◽  
Quantum Dot Lasers

Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography

1996 ◽  
Vol 427 ◽  
Author(s):  
J. Y. Yew ◽  
L. J. Chen ◽  
K. Nakamura
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Stress Measurement ◽  
Deep Submicron ◽  
Film Stress ◽  
Size And Shape ◽  
Thin Film Stress ◽  
Single Orientation

AbstractEpitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.

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