scholarly journals Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

2019 ◽  
Vol 40 (10) ◽  
pp. 101302 ◽  
Author(s):  
Shujie Pan ◽  
Victoria Cao ◽  
Mengya Liao ◽  
Ying Lu ◽  
Zizhuo Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Epitaxial Growth ◽  
Silicon Substrate ◽  
Recent Progress ◽  
Quantum Dot Lasers

Recent progress of III–V quantum dot infrared photodetectors on silicon

2019 ◽  
Vol 7 (46) ◽  
pp. 14441-14453 ◽  
Author(s):  
Aobo Ren ◽  
Liming Yuan ◽  
Hao Xu ◽  
Jiang Wu ◽  
Zhiming Wang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Infrared Photodetectors ◽  
Heterogeneous Integration ◽  
Si Substrates ◽  
Quantum Dot Infrared Photodetectors ◽  
Infrared Photodetection

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation

1999 ◽  
Vol 69 (5-6) ◽  
pp. 413-416 ◽  
Author(s):  
M. Grundmann ◽  
F. Heinrichsdorff ◽  
C. Ribbat ◽  
M.-H. Mao ◽  
D. Bimberg
Keyword(s):  
Quantum Dot ◽  
Output Power ◽  
Recent Progress ◽  
Quantum Dot Lasers ◽  
High Output Power ◽  
Theoretical Understanding ◽  
Power Operation ◽  
High Output

Passively mode-locked InAs quantum dot lasers on a silicon substrate by Pd-GaAs wafer bonding

2017 ◽  
Vol 110 (14) ◽  
pp. 141110 ◽  
Author(s):  
Zihao Wang ◽  
Michael L. Fanto ◽  
Jeffrey A. Steidle ◽  
Abdelsalam A. Aboketaf ◽  
Nathan A. Rummage ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Silicon Substrate ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot
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