An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

2005 ◽  
Vol 17 (8) ◽  
pp. 1614-1616 ◽  
Author(s):  
T. Akiyama ◽  
M. Ekawa ◽  
M. Sugawara ◽  
K. Kawaguchi ◽  
Hisao Sudo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Output Power ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
High Penalty

scholarly journals Увеличение эффективности тандема полупроводниковый лазер-оптический усилитель на основе самоорганизующихся 8s квантовых точек

2021 ◽  
Vol 55 (12) ◽  
pp. 1223
Author(s):  
А.Е. Жуков ◽  
Н.В. Крыжановская ◽  
Э.И. Моисеев ◽  
А.С. Драгунова ◽  
А.М. Надточий ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Laser Diode ◽  
Ground State ◽  
Semiconductor Optical Amplifier ◽  
Optical Transition ◽  
Optical Amplifier ◽  
Rate Equations ◽  
Resonator Length ◽  
Optimal Value

The rate equations are used to analyze the characteristics of a tandem consisting of a laser diode and a semiconductor optical amplifier made of a single heterostructure with quantum dots. The optimal value of the current distribution coefficient the amplifier and the laser, as well as the optimal resonator length that provides the highest output power of the tandem were determined. It is shown that the use of the tandem allows, at the same total consumed current, to significantly (more than 4 times for 1 A) increase the power emitted through the ground-state optical transition in comparison with that achievable with a laser diode solely being limited by the onset of lasing through an excited-state optical transition.

Novel Semiconductor Optical Amplifier with Large Gain and High Saturation Output Power

2021 ◽  
Author(s):  
Shuqi Yu ◽  
Antonin Gallet ◽  
Hajar Elfaiki ◽  
Nayla EL Dahdah ◽  
Romain Brenot
Keyword(s):  
Output Power ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Large Gain ◽  
High Saturation

scholarly journals Мощность насыщения оптического усилителя на основе самоорганизующихся квантовых точек

2021 ◽  
Vol 55 (9) ◽  
pp. 820
Author(s):  
А.Е. Жуков ◽  
Н.В. Крыжановская ◽  
Э.И. Моисеев ◽  
А.М. Надточий ◽  
Ф.И. Зубов ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Charge Carriers ◽  
Rate Equations ◽  
Gain Saturation ◽  
Injection Level ◽  
Maximum Value ◽  
Internal Parameters ◽  
Saturation Power

Gain saturation in a semiconductor optical amplifier with an array of quantum dots was studied analytically and by numerical simulation on the basis of an analysis of the rate equations. It is shown that, at a moderate injection level, the saturation power increases in proportion to the current density, and then reaches its maximum value, limited by the rate of capture of charge carriers to the ground state and by the number of quantum dots interacting with photons. Expressions are proposed that allow an explicit description of the dependence of the saturation power on the current and its relationship with the internal parameters of the active region.

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