scholarly journals Увеличение эффективности тандема полупроводниковый лазер-оптический усилитель на основе самоорганизующихся 8s квантовых точек

2021 ◽  
Vol 55 (12) ◽  
pp. 1223
Author(s):  
А.Е. Жуков ◽  
Н.В. Крыжановская ◽  
Э.И. Моисеев ◽  
А.С. Драгунова ◽  
А.М. Надточий ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Laser Diode ◽  
Ground State ◽  
Semiconductor Optical Amplifier ◽  
Optical Transition ◽  
Optical Amplifier ◽  
Rate Equations ◽  
Resonator Length ◽  
Optimal Value

The rate equations are used to analyze the characteristics of a tandem consisting of a laser diode and a semiconductor optical amplifier made of a single heterostructure with quantum dots. The optimal value of the current distribution coefficient the amplifier and the laser, as well as the optimal resonator length that provides the highest output power of the tandem were determined. It is shown that the use of the tandem allows, at the same total consumed current, to significantly (more than 4 times for 1 A) increase the power emitted through the ground-state optical transition in comparison with that achievable with a laser diode solely being limited by the onset of lasing through an excited-state optical transition.

scholarly journals Мощность насыщения оптического усилителя на основе самоорганизующихся квантовых точек

2021 ◽  
Vol 55 (9) ◽  
pp. 820
Author(s):  
А.Е. Жуков ◽  
Н.В. Крыжановская ◽  
Э.И. Моисеев ◽  
А.М. Надточий ◽  
Ф.И. Зубов ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Charge Carriers ◽  
Rate Equations ◽  
Gain Saturation ◽  
Injection Level ◽  
Maximum Value ◽  
Internal Parameters ◽  
Saturation Power

Gain saturation in a semiconductor optical amplifier with an array of quantum dots was studied analytically and by numerical simulation on the basis of an analysis of the rate equations. It is shown that, at a moderate injection level, the saturation power increases in proportion to the current density, and then reaches its maximum value, limited by the rate of capture of charge carriers to the ground state and by the number of quantum dots interacting with photons. Expressions are proposed that allow an explicit description of the dependence of the saturation power on the current and its relationship with the internal parameters of the active region.

scholarly journals Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
T. A. Nguyen ◽  
S. Mackowski ◽  
H. Rho ◽  
H. E. Jackson ◽  
L. M. Smith ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Ground State ◽  
State Transition ◽  
Longitudinal Optical ◽  
Photoluminescence Spectra ◽  
Single Quantum Dots ◽  
Major Carrier ◽  
Excitation Mechanisms ◽  
Self Assembled

ABSTRACTWe show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state – ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state – ground state relaxation is important for all dots in ensemble, while phonon-assisted processes are dominant for the dots with smaller lateral size.

Erbium Doped Tellurite Glasses

1991 ◽  
Vol 244 ◽  
Author(s):  
Jau-Sheng Wang ◽  
Elias Snitzer ◽  
George H. Sigel
Keyword(s):  
Excited State ◽  
Cross Section ◽  
Cross Sections ◽  
Ground State ◽  
Optical Transition ◽  
Emission Cross Section ◽  
Excited State Absorption ◽  
Tellurite Glasses ◽  
Ground State Absorption ◽  
Erbium Doped

ABSTRACTThe results to be presented focus on the optimization of tellurite glass compositions which are suitable both for doping with erbium oxide as well as subsequent for fiber drawing. The laser related properties, such as fluorescence spectrum, lifetime, and optical transition cross sections will be presented. Judd-Ofelt parameters for erbium in the glasses have been exploited to predict fluorescence lifetime, excited state absorption(ESA), ground state absorption(GSA) and ground state fluorescence(GSF). For comparison, the absorption cross section, emission cross section, excited state absorption(ESA)/ground state absorption(GSA)(0.8μm pumping) and fluorescence terminating in the ground state(GSF)/excited state absorption(ESA) ratios are calculated for both Al2O3-SiO2 and tellurite glasses.

High power narrow linewidth discrete mode laser diode integrated with a curved semiconductor optical amplifier emitting at 2051  nm

2018 ◽  
Vol 57 (22) ◽  
pp. E1 ◽  
Author(s):  
Richard Phelan ◽  
Michael Gleeson ◽  
Diarmuid Byrne ◽  
John O’Carroll ◽  
Marta Nawrocka ◽  
...  
Keyword(s):  
Laser Diode ◽  
High Power ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Narrow Linewidth ◽  
Mode Laser ◽  
Discrete Mode

Wavelength Tunability of Laterally Coupled Semiconductor Optical Amplifier and Semiconductor Laser Diode

2002 ◽  
Vol 41 (Part 2, No. 5B) ◽  
pp. L574-L576 ◽  
Author(s):  
Dae Sin Kim ◽  
Seok Lee ◽  
Jae Hun Kim ◽  
Deok Ha Woo ◽  
Sun Ho Kim ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Laser Diode ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Semiconductor Laser Diode ◽  
Wavelength Tunability ◽  
Coupled Semiconductor
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