Effect of Silicon Doping in the Quantum-Well Barriers on the Electrical and Optical Properties of Visible Green Light-Emitting Diodes

2008 ◽  
Vol 20 (21) ◽  
pp. 1769-1771 ◽  
Author(s):  
Jae-Hyun Ryou ◽  
Jae Limb ◽  
Wonseok Lee ◽  
Jianping Liu ◽  
Z. Lochner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Silicon Doping ◽  
Electrical And Optical Properties ◽  
Light Emitting

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

2009 ◽  
Vol 206 (11) ◽  
pp. 2637-2640 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Doyeol Ahn ◽  
Bun-Hei Koo ◽  
Jong-Wook Kim
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Electronic And Optical Properties
Sign in / Sign up

Export Citation Format

Share Document