GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate

2011 ◽  
Vol 23 (17) ◽  
pp. 1207-1209 ◽  
Author(s):  
Wei-Chih Lai ◽  
Ya-Yu Yang ◽  
Ying-Hong Chen ◽  
Jinn-Kong Sheu
Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.


2013 ◽  
Vol 6 (7) ◽  
pp. 072103 ◽  
Author(s):  
Hao Guo ◽  
Xiong Zhang ◽  
Hongjun Chen ◽  
Honggang Liu ◽  
Peiyuan Zhang ◽  
...  

2010 ◽  
Vol 207 (6) ◽  
pp. 1414-1417 ◽  
Author(s):  
Sei-Min Kim ◽  
Young-Boo Moon ◽  
Il-Kyu Park ◽  
Ja-Soon Jang

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