Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma-Assisted Molecular Beam Epitaxy

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

Physics Letters A ◽

10.1016/s0375-9601(02)00619-9 ◽

2002 ◽

Vol 299 (1) ◽

pp. 79-84 ◽

Cited By ~ 4

Author(s):

M Xu ◽

C.X Liu ◽

H.F Liu ◽

G.M Luo ◽

X.M Chen ◽

...

Keyword(s):

Thermal Stability ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Cubic Gan ◽

Gan Film ◽

Thermal Stability Of

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GaN film growth on LiNbO3surfaces using molecular beam epitaxy

Journal of Physics Conference Series ◽

10.1088/1742-6596/187/1/012013 ◽

2009 ◽

Vol 187 ◽

pp. 012013 ◽

Cited By ~ 2

Author(s):

Man Hoai Nam ◽

Son Chul Goo ◽

Moon Deock Kim ◽

Woochul Yang

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Film Growth ◽

Gan Film

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Improvement of crystal quality of cubic GaN film using AlN/GaN ordered alloy on GaAs[100] by plasma assisted molecular beam epitaxy

International Conference on Molecular Bean Epitaxy ◽

10.1109/mbe.2002.1037798 ◽

2003 ◽

Author(s):

R. Kimura ◽

A. Shigemori ◽

J. Shike ◽

M. Ohuchi ◽

K. Ishida ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Crystal Quality ◽

Cubic Gan ◽

Gan Film

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Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-693-i2.3.1 ◽

2001 ◽

Vol 693 ◽

Cited By ~ 1

Author(s):

D. J. As ◽

U. Köhler ◽

K. Lischka

Keyword(s):

Optical Properties ◽

Binding Energy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Carbon Doping ◽

Rf Plasma ◽

Spectral Position ◽

Carbon Doped ◽

Photoluminescence Line ◽

Cubic Gan

AbstractThe optical properties of Carbon doped cubic GaN epilayers have been investigated by temperature and intensity dependent photoluminescence measurements. RF-plasma assisted molecular beam epitaxy equipped with an e-beam-evaporation source for carbon doping is used to grow the cubic GaN layers on GaAs (001) substrates. With increasing Carbon flux a new photoluminescence line at 3.08 eV appeared at 2K. This line is attributed to a donor acceptor transistion, which involves the shallow CN acceptor. From the spectral position the binding energy of the C acceptor is estimated to be about EC = 0.215 eV. Our experiments demonstrate that C indeed introduces a shallow acceptor in cubic GaN with an acceptor binding energy, which is about 15 meV lower than that observed for the Mg acceptor in cubic GaN. However, at high C fluxes a deep red luminescence band appeared at 2.1 eV, indicating compensation effects.

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Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)02284-4 ◽

2003 ◽

Vol 251 (1-4) ◽

pp. 455-459 ◽

Cited By ~ 4

Author(s):

Ryuhei Kimura ◽

Atsushi Shigemori ◽

Junichi Shike ◽

Koichi Ishida ◽

Kiyoshi Takahashi

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Crystal Quality ◽

Cubic Gan ◽

Gan Film

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Microstructure of GaN Films Grown by RF-Plasma Assisted Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-639-g3.47 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 5

Author(s):

Philomela Komninou ◽

Thomas Kehagias ◽

Joseph Kioseoglou ◽

Eirini Sarigiannidou ◽

Theodoros Karakostas ◽

...

Keyword(s):

Electron Microscopy ◽

Low Temperature ◽

Molecular Beam ◽

Flux Ratio ◽

Rf Plasma ◽

Low Density ◽

Transmission Electron ◽

Cubic Gan ◽

Gan Film ◽

N Flux

ABSTRACTThe influence of the variation of the Ga/N flux ratio during deposition and of the different substrate nitridation temperatures on the microstructure of 2H-GaN films grown on (0001) sapphire, by RF plasma MBE, is investigated by conventional and high resolution Transmission Electron Microscopy (TEM-HREM). The different growth rates of the inverse polarity domains in Ga-rich and N-rich specimens result in film surfaces of different roughness, whereas the stacking fault (SF) content is significantly higher in samples grown under N-rich conditions. Low temperature nitridation of the substrate results in a low density of defects in GaN film. Cubic GaN “pockets”, near the substrate/GaN interface that are present in low temperature nitridated samples are not observed in high temperature nitridated samples.

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Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112̄0) sapphire grown by rf-molecular beam epitaxy

RSC Advances ◽

10.1039/c5ra10099b ◽

2015 ◽

Vol 5 (89) ◽

pp. 73261-73267 ◽

Cited By ~ 18

Author(s):

T. C. Shibin Krishna ◽

Neha Aggarwal ◽

G. Anurag Reddy ◽

Palak Dugar ◽

Monu Mishra ◽

...

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Sapphire Substrate ◽

Systematic Study ◽

Molecular Beam ◽

Carrier Dynamics ◽

Rf Plasma ◽

Optical And Electrical Properties ◽

Defect States ◽

Gan Film

A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on a-plane (112̄0) sapphire substrate via rf-plasma molecular beam epitaxy.

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