Temperature Robust Silicon Resonant Accelerometer with Stress Isolation Frame Mounted on Axis-Symmetrical Anchors

2020 ◽  
Author(s):  
Jian Cui ◽  
Mengxia Liu ◽  
Haibing Yang ◽  
Dong Li ◽  
Qiancheng Zhao
Keyword(s):  
Stress Isolation ◽  
Resonant Accelerometer

A Temperature-Insensitive Micromachined Resonant Accelerometer with Thermal Stress Isolation

2018 ◽  
Author(s):  
Yonggang Yin ◽  
Zhengxiang Fang ◽  
Jingxin Dong ◽  
Yunfeng Liu ◽  
Fengtian Han
Keyword(s):  
Thermal Stress ◽  
Stress Isolation ◽  
Resonant Accelerometer

A sensitive micromachined resonant accelerometer for moving-base gravimetry

2021 ◽  
pp. 112694
Author(s):  
Zhengxiang Fang ◽  
Yonggang Yin ◽  
Chen Chen ◽  
Shujuan Zhang ◽  
Yunfeng Liu ◽  
...  
Keyword(s):  
Moving Base ◽  
Resonant Accelerometer

scholarly journals Microelectromechanical Resonant Accelerometer Designed with a High Sensitivity

Sensors ◽  
2015 ◽  
Vol 15 (12) ◽  
pp. 30293-30310 ◽  
Author(s):  
Jing Zhang ◽  
Yan Su ◽  
Qin Shi ◽  
An-Ping Qiu
Keyword(s):  
High Sensitivity ◽  
Resonant Accelerometer

scholarly journals Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2603 ◽  
Author(s):  
Zhiyong Chen ◽  
Meifeng Guo ◽  
Rong Zhang ◽  
Bin Zhou ◽  
Qi Wei
Keyword(s):  
Thermal Stress ◽  
Natural Frequency ◽  
Frequency Conversion ◽  
Thermal Stresses ◽  
Sensors And Actuators ◽  
Stress Variation ◽  
Rigid Frame ◽  
Measured Stress ◽  
Stress Isolation ◽  
Frequency Variations

The mechanical stress in silicon-on-glass MEMS structures and a stress isolation scheme were studied by analysis and experimentation. Double-ended tuning forks (DETFs) were used to measure the stress based on the stress-frequency conversion effect. Considering the coefficients of thermal expansion (CTEs) of silicon and glass and the temperature coefficient of the Young’s modulus of silicon, the sensitivity of the natural frequency to temperature change was analyzed. A stress isolation mechanism composed of annular isolators and a rigid frame is proposed to prevent the structure inside the frame from being subjected to thermal stresses. DETFs without and with one- or two-stage isolation frames with the orientations <110> and <100> were designed, the stress and natural frequency variations with temperature were simulated and measured. The experimental results show that in the temperature range of −50 °C to 85 °C, the stress varied from −18 MPa to 10 MPa in the orientation <110> and −11 MPa to 5 MPa in the orientation <100>. For the 1-stage isolated DETF of <110> orientation, the measured stress variation was only 0.082 MPa. The thermal stress can be mostly rejected by a stress isolation structure, which is applicable in the design of stress-sensitive MEMS sensors and actuators.

Vacuum Adhesive Bonding and Stress Isolation for MEMS Resonant Pressure Sensor Package

2011 ◽  
Vol 694 ◽  
pp. 896-900 ◽  
Author(s):  
Yu Xin Li ◽  
De Yong Chen ◽  
Jun Bo Wang
Keyword(s):  
Pressure Sensor ◽  
Bonding Strength ◽  
Adhesive Bonding ◽  
Thermal Stresses ◽  
Time Pressure ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Temperature Drift ◽  
Stress Isolation ◽  
Sensor Package

This paper presents a method of low temperature adhesive bonding and stress isolation for MEMS resonant pressure sensor hermetic packaging using non-photosensitive benzo-cyclo-butene (BCB) from Dow Co. According to the bonding process, pre-bake time, pumping time, pressure placed on the sensor and the thickness of crosslink layer are the most important factors. Stress isolation is designed to minimize thermal stresses to the resonant pressure sensor package. Experimental results show that this bonding process is a viable for MEMS resonant pressure sensor with the bonding temperature below 250°C, measured bonding strength more than 30MPa, the temperature drift less than 0.05%/°C in the range of -40°C to 70°C(10% of that without stress isolation), and the bonding strength maintains well after thermal treatments, handling, bench testing and implantations.

Improvement of bias stability of micromechanical silicon resonant accelerometer at room temperature

2016 ◽  
Vol 24 (5) ◽  
pp. 1050-1056
Author(s):  
严 斌 YAN Bin ◽  
尹永刚 YIN Yong-gang ◽  
董景新 DONG Jing-xin
Keyword(s):  
Room Temperature ◽  
Bias Stability ◽  
Resonant Accelerometer

Parameter optimization of drive circuit in silicon resonant accelerometer

2014 ◽  
Vol 22 (6) ◽  
pp. 1500-1506
Author(s):  
赵健 ZHAO Jian ◽  
苏岩 SU Yan ◽  
赵阳 ZHAO Yang ◽  
夏国明 XIA Guo-ming
Keyword(s):  
Parameter Optimization ◽  
Drive Circuit ◽  
Resonant Accelerometer

scholarly journals Resonant Accelerometer based on Double-Ended Tuning Fork and a Force Amplification Mechanism

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1030 ◽  
Author(s):  
Eurico Esteves Moreira ◽  
Burkhard Kuhlmann ◽  
João Gaspar ◽  
Luis Alexandre Rocha
Keyword(s):  
Tuning Fork ◽  
Sensitivity Enhancement ◽  
Amplification Mechanism ◽  
Resonant Accelerometer ◽  
Low Pressures

Resonant accelerometers are an alternative to amplitude modulated devices due to their higher integration capabilities, since they are encapsulated in vacuum and are stable at low pressures. Vacuum is required for some sensors (i.e., gyroscopes) but amplitude modulated accelerometers tend to be unstable under such conditions and therefore cannot be integrated in the same package. Herewith, a device composed by double-ended tuning fork resonators (DETF) and a force amplification mechanism for sensitivity enhancement is presented. Characterization of the fabricated devices was performed, and the design was successfully validated. A sensitivity close to 80 Hz/g was experimentally measured and the DETF characterization for different driving (AC) and bias voltages (DC) is also presented.

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