Direct measurement of shear piezoresistance coefficient on single crystal silicon nanowire by asymmetrical four-point bending test

2014 ◽  
Author(s):  
Taiki Kimura ◽  
Naoki Saito ◽  
Toshimitsu Takeshita ◽  
Koji Sugano ◽  
Yoshitada Isono
Keyword(s):  
Single Crystal ◽  
Direct Measurement ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Bending Test ◽  
Crystal Silicon ◽  
Four Point Bending ◽  
Four Point Bending Test ◽  
Piezoresistance Coefficient

Ga∕Au alloy catalyst for single crystal silicon-nanowire epitaxy

2007 ◽  
Vol 90 (2) ◽  
pp. 023109 ◽  
Author(s):  
A. Lugstein ◽  
M. Steinmair ◽  
Y. J. Hyun ◽  
E. Bertagnolli ◽  
P. Pongratz
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Alloy Catalyst

scholarly journals Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1060 ◽  
Author(s):  
Jiaqi Zhang ◽  
Yi Zhang ◽  
Dazheng Chen ◽  
Weidong Zhu ◽  
He Xi ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Single Crystal ◽  
Ohmic Contact ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Bending Test ◽  
Crystal Silicon ◽  
Silicon Nanomembrane ◽  
Tio2 Interlayer

Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.

scholarly journals Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device

2016 ◽  
Vol 2 ◽  
pp. 1405-1412 ◽  
Author(s):  
Toshiyuki Tsuchiya ◽  
Tetsuya Hemmi ◽  
Jun-ya Suzuki ◽  
Yoshikazu Hirai ◽  
Osamu Tabata
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Tensile Fracture ◽  
Testing Device ◽  
Crystal Silicon

Orientation-Controlled Growth of Single-Crystal Silicon-Nanowire Arrays

2005 ◽  
Vol 17 (1) ◽  
pp. 56-61 ◽  
Author(s):  
S. Ge ◽  
K. Jiang ◽  
X. Lu ◽  
Y. Chen ◽  
R. Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Nanowire Arrays ◽  
Controlled Growth ◽  
Crystal Silicon ◽  
Silicon Nanowire Arrays

Synthesis of Ordered Single Crystal Silicon Nanowire Arrays

2001 ◽  
Vol 13 (16) ◽  
pp. 1238 ◽  
Author(s):  
X.-Y. Zhang ◽  
L.-D. Zhang ◽  
G.-W. Meng ◽  
G.-H. Li ◽  
N.-Y. Jin-Phillipp ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Nanowire Arrays ◽  
Crystal Silicon ◽  
Silicon Nanowire Arrays
Sign in / Sign up

Export Citation Format

Share Document