Ga∕Au alloy catalyst for single crystal silicon-nanowire epitaxy

2007 ◽  
Vol 90 (2) ◽  
pp. 023109 ◽  
Author(s):  
A. Lugstein ◽  
M. Steinmair ◽  
Y. J. Hyun ◽  
E. Bertagnolli ◽  
P. Pongratz
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Alloy Catalyst

scholarly journals Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device

2016 ◽  
Vol 2 ◽  
pp. 1405-1412 ◽  
Author(s):  
Toshiyuki Tsuchiya ◽  
Tetsuya Hemmi ◽  
Jun-ya Suzuki ◽  
Yoshikazu Hirai ◽  
Osamu Tabata
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Tensile Fracture ◽  
Testing Device ◽  
Crystal Silicon

Orientation-Controlled Growth of Single-Crystal Silicon-Nanowire Arrays

2005 ◽  
Vol 17 (1) ◽  
pp. 56-61 ◽  
Author(s):  
S. Ge ◽  
K. Jiang ◽  
X. Lu ◽  
Y. Chen ◽  
R. Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Nanowire Arrays ◽  
Controlled Growth ◽  
Crystal Silicon ◽  
Silicon Nanowire Arrays

Synthesis of Ordered Single Crystal Silicon Nanowire Arrays

2001 ◽  
Vol 13 (16) ◽  
pp. 1238 ◽  
Author(s):  
X.-Y. Zhang ◽  
L.-D. Zhang ◽  
G.-W. Meng ◽  
G.-H. Li ◽  
N.-Y. Jin-Phillipp ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Nanowire Arrays ◽  
Crystal Silicon ◽  
Silicon Nanowire Arrays

scholarly journals Top-down fabrication of single crystal silicon nanowire using optical lithography

2012 ◽  
Vol 112 (2) ◽  
pp. 024309 ◽  
Author(s):  
Nor F. Za’bah ◽  
Kelvin S. K. Kwa ◽  
Leon Bowen ◽  
Budhika Mendis ◽  
Anthony O’Neill
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Optical Lithography ◽  
Top Down ◽  
Crystal Silicon

Fabrication of Three-Dimensional MIS Nano-Capacitor Based on Nanoimprinted Single Crystal Silicon Nanowire Arrays

2012 ◽  
Vol 4 (4) ◽  
pp. 333-338 ◽  
Author(s):  
Yujia Zhai ◽  
Marylene Palard ◽  
Leo Mathew ◽  
Muhammad Mustafa Hussain ◽  
C. Grant Willson ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Three Dimensional ◽  
Single Crystal Silicon ◽  
Nanowire Arrays ◽  
Crystal Silicon ◽  
Silicon Nanowire Arrays

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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