Flat nonlinear optics with ultrathin highly-nonlinear metasurfaces

2016 ◽  
Author(s):  
N. Nookala ◽  
J. Lee ◽  
M. Tymchenko ◽  
J.S. Gomez-Diaz ◽  
F. Demmerle ◽  
...  
Keyword(s):  
Nonlinear Optics ◽  
Highly Nonlinear

scholarly journals Applications of ultrafast wavefront rotation in highly nonlinear optics

2014 ◽  
Vol 47 (12) ◽  
pp. 124004 ◽  
Author(s):  
F Quéré ◽  
H Vincenti ◽  
A Borot ◽  
S Monchocé ◽  
T J Hammond ◽  
...  
Keyword(s):  
Nonlinear Optics ◽  
Highly Nonlinear

scholarly journals Enhanced Optical Nonlinear Performance with Integrated 2D Graphene Oxide Thin Films in CMOS Compatible Devices

2021 ◽  
Author(s):  
Yuning Zhang ◽  
Jiayang Wu ◽  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Nonlinear Optics ◽  
Kerr Nonlinearity ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Highly Nonlinear ◽  
Cmos Compatible

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

scholarly journals High third-order optical nonlinear performance in CMOS devices integrated with 2D graphene oxide films

2021 ◽  
Author(s):  
David Moss ◽  
jiayang wu ◽  
yuning zhang
Keyword(s):  
Graphene Oxide ◽  
Nonlinear Optics ◽  
Kerr Nonlinearity ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Highly Nonlinear ◽  
Patterned Films

Abstract We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈ 7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈ 9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

scholarly journals Enhanced optical nonlinear performance with 2D graphene oxide thin films integrated with CMOS compatible devices

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Nonlinear Optics ◽  
Kerr Nonlinearity ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Highly Nonlinear ◽  
Cmos Compatible

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

Laser Oscillation in Aggregates of Ultrasmall Si Nanoparticles

2002 ◽  
Vol 728 ◽  
Author(s):  
Munir H. Nayfeh
Keyword(s):  
Stimulated Emission ◽  
Gaussian Beams ◽  
Single Particles ◽  
Nonlinear Characteristics ◽  
Femtosecond Radiation ◽  
Highly Nonlinear ◽  
Line Narrowing ◽  
Si Nanoparticles ◽  
Speckle Patterns ◽  
Spectral Line Narrowing

AbstractWe dispersed electrochemically etched Si into ultrabright ultrasmall nanoparticles, with brightness higher than fluorescein or rhodamine. The emission from single particles is readily detectable. Aggregates or films of the particles exhibit emission with highly nonlinear characteristics. We observe directed blue beams at ∼ 410 nm between faces of aggregates excited by femtosecond radiation at 780 nm; and at ∼ 610 nm from aggregates of red luminescent Si nanoparticles excited by radiation at 550-570 nm from a mercury lamp. Intense directed Gaussian beams, a pumping threshold, spectral line narrowing, and speckle patterns manifest the emission. The results are analyzed in terms of population inversion and stimulated emission in quantum confinement-induced Si-Si dimer phase, found only on ultrasmall Si nanoparticles. This microlasing constitutes an important step towards the realization of a laser on a chip.

Sign in / Sign up

Export Citation Format

Share Document