Small-signal lumped-element equivalent model for high operating temperature infrared photodetectors

Author(s):  
Katarzyna Opalska ◽  
Leszek J. Opalski ◽  
Wojciech Wiatr ◽  
Jozef Piotrowski ◽  
Dominik Kasprowicz
Photonics ◽  
2021 ◽  
Vol 8 (12) ◽  
pp. 564
Author(s):  
He Zhu ◽  
Jiafeng Liu ◽  
Hong Zhu ◽  
Yunlong Huai ◽  
Meng Li ◽  
...  

High operating temperature mid-wavelength InAs/GaSb superlattice infrared photodetectors with a single heterojunction structure grown by metal–organic chemical vapor deposition are reported. By inserting a fully-depleted wider-gap barrier layer between the absorber and the p-contact, “diffusion-limited” behavior has been achieved for the heterojunction “PNn” device, in contrast to the conventional pin homojunction device. The PNn device with a 50% cutoff wavelength of 4.5 μm exhibited a dark current of 2.05 × 10−4 A/cm2 and a peak specific detectivity of 1.28 × 1011 cm·Hz·W−1 at 150 K and a reverse bias of −0.1 V.


2014 ◽  
Author(s):  
H. Lutz ◽  
R. Breiter ◽  
H. Figgemeier ◽  
T. Schallenberg ◽  
W. Schirmacher ◽  
...  

2010 ◽  
Author(s):  
A. G. Unil Perera ◽  
S. G. Matsik ◽  
M. S. Shishodia ◽  
R. C. Jayasinghe

2018 ◽  
Vol 113 (2) ◽  
pp. 021101 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sir B. Rafol ◽  
Sam A. Keo ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document