RF transistor macromodeling with substrate effect in power amplifier design

2006 ◽  
Author(s):  
A.A. EL-Sabban ◽  
Hisham Haddara ◽  
H.F. Ragai
Keyword(s):  
Power Amplifier ◽  
Substrate Effect ◽  
Amplifier Design ◽  
Rf Transistor

Practical Considerations for the CW Power Amplifier Design for Lower Hybrid Frequency Applications

2020 ◽  
Author(s):  
Sandeep R. Sainkar ◽  
Alice N. Cheeran ◽  
Gajendrakumar Shinde ◽  
Promod K. Sharma ◽  
Harish V. Dixit
Keyword(s):  
Power Amplifier ◽  
Lower Hybrid ◽  
Hybrid Frequency ◽  
Amplifier Design

A 77 GHz Power Amplifier Design with in-Phase Power Combing for 20 dBm Psat in a 40-nm CMOS Technology

2021 ◽  
Author(s):  
Guanglai Wu ◽  
Yi Zhang ◽  
Lin He ◽  
Diyang Gao ◽  
Yang Liu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Amplifier Design ◽  
77 Ghz

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

Highly Efficient and Linear Class E SiGe Power Amplifier Design

2006 ◽  
Author(s):  
Donald Lie ◽  
Jeremy Popp ◽  
Jason Rowland ◽  
Annie Yang ◽  
Feipeng Wang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Highly Efficient ◽  
Amplifier Design ◽  
Class E

Class-AB Power Amplifier Design Guidelines

2005 ◽  
Author(s):  
F. Giannini ◽  
G. Leuzzi ◽  
E. Limiti ◽  
L. Scucchia
Keyword(s):  
Power Amplifier ◽  
Design Guidelines ◽  
Class Ab ◽  
Amplifier Design

Advanced Techniques in RF Power Amplifier Design [Book Review]

2003 ◽  
Vol 4 (1) ◽  
pp. 70-74 ◽  
Author(s):  
A. Riddle
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Amplifier Design

Student High Efficiency Power Amplifier Design Competition [Education News]

2008 ◽  
Vol 9 (1) ◽  
pp. 54-56 ◽  
Author(s):  
Jim Komiak
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Design Competition ◽  
Amplifier Design ◽  
Education News
Sign in / Sign up

Export Citation Format

Share Document