Low Power Low Noise Amplifier with DC Offset Correction at 1 V Supply Voltage for Ultrasound Imaging Systems

An optimized high gain low power low noise amplifier (LNA) is presented using 90 nm CMOS process at 2.4 GHz frequency for Zigbee applications. For achieving desired design specifications, the LNA is optimized by particle swarm optimization (PSO). The PSO is successfully implemented for optimizing noise figure (NF) when satisfying all the design specifications such as gain, power dissipation, linearity and stability. PSO algorithm is developed in MATLAB to optimize the LNA parameters. The LNA with optimized parameters is simulated using Advanced Design System (ADS) Simulator. The LNA with optimized parameters produces 21.470 dB of voltage gain, 1.031 dB of noise figure at 1.02 mW power consumption with 1.2 V supply voltage. The comparison of designed LNA with and without PSO proves that the optimization improves the LNA results while satisfying all the design constraints.

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Ultra-low power 0.45 mW 2.4 GHz CMOS low noise amplifier for wireless sensor networks using 0.13-m technology

Bulletin of Electrical Engineering and Informatics ◽

10.11591/eei.v9i1.1852 ◽

2020 ◽

Vol 9 (1) ◽

pp. 396-402

Author(s):

S. A. Z. Murad ◽

A. Azizan ◽

A. F. Hasan

Keyword(s):

Power Consumption ◽

Low Power ◽

Return Loss ◽

Supply Voltage ◽

Low Noise ◽

Low Noise Amplifier ◽

Wireless Sensor ◽

Total Power ◽

Ultra Low Power ◽

Noise Amplifier

This paper describes the design topology of a ultra-low power low noise amplifier (LNA) for wireless sensor network (WSN) application. The proposed design of ultra-low power 2.4 GHz CMOS LNA is implemented using 0.13-μm Silterra technology. The LNA benefits of low power from forward body bias technique for first and second stages. Two stages are implemented in order to enhance the gain while obtaining low power consumption for overall circuit. The simulation results show that the total power consumed is only 0.45 mW at low supply voltage of 0.55 V. The power consumption is decreased about 36% as compared with the previous work. A gain of 15.1 dB, noise figure (NF) of 5.9 dB and input third order intercept point (IIP3) of -2 dBm are achieved. The input return loss (S11) and the output return loss (S22) is -17.6 dB and -12.3 dB, respectively. Meanwhile, the calculated figure of merit (FOM) is 7.19 mW-1.

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Tunable Low-Power Low-Noise Amplifier for Healthcare Applications

10.1007/978-3-030-70887-0 ◽

2021 ◽

Author(s):

Rafael Vieira ◽

Nuno Horta ◽

Nuno Lourenço ◽

Ricardo Póvoa

Keyword(s):

Low Power ◽

Low Noise ◽

Low Noise Amplifier ◽

Healthcare Applications ◽

Noise Amplifier

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A low-power CMOS low-noise amplifier for ultra-wideband applications

2013 IEEE International Conference of Electron Devices and Solid-state Circuits ◽

10.1109/edssc.2013.6628133 ◽

2013 ◽

Author(s):

Chun-Tuan Chang ◽

Sen Wang

Keyword(s):

Low Power ◽

Low Noise ◽

Low Noise Amplifier ◽

Ultra Wideband ◽

Low Power Cmos ◽

Noise Amplifier

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A Low-Noise, Low-Power, Wide Dynamic Range Logarithmic Amplifier for Biomedical Applications

Journal of Circuits System and Computers ◽

10.1142/s0218126618501049 ◽

2018 ◽

Vol 27 (07) ◽

pp. 1850104 ◽

Cited By ~ 2

Author(s):

Yuwadee Sundarasaradula ◽

Apinunt Thanachayanont

Keyword(s):

Low Power ◽

Biomedical Applications ◽

Dynamic Range ◽

Supply Voltage ◽

Low Noise ◽

Power Supply Voltage ◽

Wide Dynamic Range ◽

Dc Offset ◽

Limiting Amplifier ◽

Logarithmic Amplifier

This paper presents the design and realization of a low-noise, low-power, wide dynamic range CMOS logarithmic amplifier for biomedical applications. The proposed amplifier is based on the true piecewise linear function by using progressive-compression parallel-summation architecture. A DC offset cancellation feedback loop is used to prevent output saturation and deteriorated input sensitivity from inherent DC offset voltages. The proposed logarithmic amplifier was designed and fabricated in a standard 0.18[Formula: see text][Formula: see text]m CMOS technology. The prototype chip includes six limiting amplifier stages and an on-chip bias generator, occupying a die area of 0.027[Formula: see text]mm2. The overall circuit consumes 9.75[Formula: see text][Formula: see text]W from a single 1.5[Formula: see text]V power supply voltage. Measured results showed that the prototype logarithmic amplifier exhibited an 80[Formula: see text]dB input dynamic range (from 10[Formula: see text][Formula: see text]V to 100[Formula: see text]mV), a bandwidth of 4[Formula: see text]Hz–10[Formula: see text]kHz, and a total input-referred noise of 5.52[Formula: see text][Formula: see text]V.

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A 219-µW ultra-low power low-noise amplifier for IEEE 802.15.4 based battery powered, portable, wearable IoT applications

SN Applied Sciences ◽

10.1007/s42452-021-04402-0 ◽

2021 ◽

Vol 3 (4) ◽

Author(s):

S. Chrisben Gladson ◽

Adith Hari Narayana ◽

V. Thenmozhi ◽

M. Bhaskar

Keyword(s):

Low Power ◽

Ieee 802.15.4 ◽

Low Voltage ◽

Low Noise ◽

Low Noise Amplifier ◽

Cmos Process ◽

Process Technology ◽

Ultra Low Power ◽

Power Mode ◽

Noise Amplifier

AbstractDue to the increased processing data rates, which is required in applications such as fifth-generation (5G) wireless networks, the battery power will discharge rapidly. Hence, there is a need for the design of novel circuit topologies to cater the demand of ultra-low voltage and low power operation. In this paper, a low-noise amplifier (LNA) operating at ultra-low voltage is proposed to address the demands of battery-powered communication devices. The LNA dual shunt peaking and has two modes of operation. In low-power mode (Mode-I), the LNA achieves a high gain ($$S21$$ S 21 ) of 18.87 dB, minimum noise figure ($${NF}_{min.}$$ NF m i n . ) of 2.5 dB in the − 3 dB frequency range of 2.3–2.9 GHz, and third-order intercept point (IIP3) of − 7.9dBm when operating at 0.6 V supply. In high-power mode (Mode-II), the achieved gain, NF, and IIP3 are 21.36 dB, 2.3 dB, and 13.78dBm respectively when operating at 1 V supply. The proposed LNA is implemented in UMC 180 nm CMOS process technology with a core area of $$0.40{\mathrm{ mm}}^{2}$$ 0.40 mm 2 and the post-layout validation is performed using Cadence SpectreRF circuit simulator.

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