A new empirical model for the characterization of low-frequency dispersive effects in FET electron devices accounting for thermal influence on the trapping state

2008 ◽  
Author(s):  
Antonio Raffo ◽  
Valeria Vadala ◽  
Giorgio Vannini ◽  
Alberto Santarelli
Keyword(s):  
Empirical Model ◽  
Low Frequency ◽  
Electron Devices ◽  
Thermal Influence ◽  
Trapping State

A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices

2011 ◽  
Vol 33 (2) ◽  
pp. 165-175 ◽  
Author(s):  
Antonio Raffo ◽  
Valeria Vadalà ◽  
Pier Andrea Traverso ◽  
Alberto Santarelli ◽  
Giorgio Vannini ◽  
...  
Keyword(s):  
Measurement System ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
Dual Source ◽  
Electron Devices

Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

2004 ◽  
Author(s):  
Jean-Guy Tartarin ◽  
Geoffroy Soubercaze-Pun ◽  
Abdelali Rennane ◽  
Laurent Bary ◽  
Robert Plana ◽  
...  
Keyword(s):  
Technology Assessment ◽  
Low Frequency ◽  
Failure Prediction ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemt ◽  
Noise Characterization
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