UV Enhanced low temperature wafer direct bonding and interface quality test

2007 ◽  
Author(s):  
Xiaohui Lin ◽  
Tielin Shi ◽  
Guanglan Liao ◽  
Zirong Tang ◽  
Shiyuan Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quality Test ◽  
Interface Quality ◽  
Wafer Direct Bonding

Low-temperature wafer direct bonding of silicon and quartz glass by a two-step wet chemical surface cleaning

2017 ◽  
Vol 57 (2S1) ◽  
pp. 02BD02 ◽  
Author(s):  
Chenxi Wang ◽  
Jikai Xu ◽  
Xiaorun Zeng ◽  
Yanhong Tian ◽  
Chunqing Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quartz Glass ◽  
Surface Cleaning ◽  
Chemical Surface ◽  
Wet Chemical ◽  
Wafer Direct Bonding

Electrical Evaluation of the Epi/Substrate Interface Quality after Different In-Situ and Ex-Situ Low-Temperature Pre-Epi Cleaning Methods

1998 ◽  
Vol 65-66 ◽  
pp. 237-240 ◽  
Author(s):  
Matty Caymax ◽  
S. Decoutere ◽  
Erika Röhr ◽  
W. Vandervorst ◽  
Marc M. Heyns ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ex Situ ◽  
Interface Quality ◽  
Substrate Interface ◽  
Cleaning Methods

Effect of Ultra Violet Process and Annealing on Reliability in Low Temperature Silicon Wafer Direct Bonding

2011 ◽  
Vol 4 (3) ◽  
pp. 774-780 ◽  
Author(s):  
Rizwan Malik ◽  
Tielin Shi ◽  
Zirong Tang ◽  
Shiyuan Liu
Keyword(s):  
Low Temperature ◽  
Silicon Wafer ◽  
Ultra Violet ◽  
Wafer Direct Bonding

Low Temperature Wafer Direct Bonding Using Wet Chemical Treatment

2012 ◽  
Vol 482-484 ◽  
pp. 2381-2384
Author(s):  
Yan Li Zhao ◽  
Zi Jun Song ◽  
Yan Li ◽  
Hai Sheng San ◽  
Yu Xi Yu
Keyword(s):  
Low Temperature ◽  
Tensile Test ◽  
Silicon Oxide ◽  
Process Condition ◽  
Experimental Results ◽  
Optimum Process ◽  
Infrared Transmission ◽  
Chemical Surface ◽  
Wet Chemical ◽  
Wafer Direct Bonding

In this paper, the low-temperature (less than or equal to 400 °C) silicon wafer direct bonding technology using wet chemical surface treatment is proposed. For bonded pairs of silicon-oxide-covered wafers, the optimum process condition is established with respect to the experimental results of two different wet chemical processing methods. The bonding quality is evaluated through infrared transmission test and tensile test. Experimental results indicate that the bonding strength of the additional 29% NH3•H2O treated samples is about 7.2 MPa, while it is no more than 3.1 MPa for the only piranha (H2SO4/H2O2) solution and RCA1 (NH3•H2O/H2O2/H2O) solution cleaned samples. Effect of the pulling speed on tensile test is also investigated. The results show that the pulling speed effect should be considered during the tensile test.

Characterization of Silicon Carbon Nitride for Low Temperature Wafer-to-Wafer Direct Bonding

2020 ◽  
Vol 98 (4) ◽  
pp. 21-31
Author(s):  
Fuya Nagano ◽  
Serena Iacovo ◽  
Alain Phommahaxay ◽  
Fumihiro Inoue ◽  
Erik Sleeckx ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carbon Nitride ◽  
Silicon Carbon ◽  
Wafer Direct Bonding ◽  
Silicon Carbon Nitride

Characterization of Silicon Carbon Nitride for Low Temperature Wafer-to-Wafer Direct Bonding

2020 ◽  
Vol MA2020-02 (22) ◽  
pp. 1650-1650
Author(s):  
Fuya Nagano ◽  
Serena Iacovo ◽  
Alain Phommahaxay ◽  
Fumihiro Inoue ◽  
Erik Sleeckx ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carbon Nitride ◽  
Silicon Carbon ◽  
Wafer Direct Bonding ◽  
Silicon Carbon Nitride

Characterization of interface quality between various low-temperature oxides and Si using room-temperature-photoluminescence and Raman spectroscopy

2013 ◽  
Vol 28 (9) ◽  
pp. 1269-1277 ◽  
Author(s):  
Shiu-Ko Jang Jian ◽  
Chih-Cherng Jeng ◽  
Ting-Chun Wang ◽  
Chih-Mu Huang ◽  
Ying-Lang Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Interface Quality ◽  
Room Temperature Photoluminescence ◽  
Image Position

Abstract

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