scholarly journals PoisSolver: a Tool for Modelling Silicon Dangling Bond Clocking Networks

2020 ◽  
Author(s):  
Hsi Nien Chiu ◽  
Samuel S. H. Ng ◽  
Jacob Retallick ◽  
Konrad Walus
Keyword(s):  
Dangling Bond

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

Bond equilibrium theory for Te-rich liquid Tl–Te alloys

1977 ◽  
Vol 55 (11) ◽  
pp. 1930-1936 ◽  
Author(s):  
Melvin Cutler
Keyword(s):  
Free Energy ◽  
Good Description ◽  
Hole Concentration ◽  
Enthalpy Of Mixing ◽  
Dangling Bond ◽  
Fermi Model ◽  
Bond Model ◽  
Independent Information ◽  
Molecular Bond ◽  
Rich Liquid

Recent work has provided independent information about the behavior of the hole concentration c in TlxTe1−x as a function of temperature T and composition x in the range 0.2 ≤ x ≤ 0.6. This makes possible a critical reexamination of a molecular bond model for the structure of the alloy, in which holes are generated by broken Te—Te bonds. The earlier theory is revised to formulate an unrestricted independent bond model (ibm), for which the equations are simple and have obvious physical interpretations. This provides a good description of c(T) but only a qualitatively correct c(x). Using a Thomas–Fermi model for the screening interaction between holes and the acceptor ions, it is shown that the equilibrium constant can be expected to increase rapidly with c at large enough values. A modification in which the free energy of a dangling bond is decreased by proximity to a Tl—Te bond is found to significantly improve the result for c(x). The thermochemical behavior is derived. The entropy of mixing is in fair agreement with experiment, but the enthalpy of mixing is grossly wrong. This reflects the neglect of intermolecular interactions in the theory, which, it seems, can easily account for the remaining discrepancies in the predicted behavior of c.

Interaction of a conjugated polyaromatic molecule with a single dangling bond quantum dot on a hydrogenated semiconductor

2016 ◽  
Vol 18 (5) ◽  
pp. 3854-3861 ◽  
Author(s):  
Szymon Godlewski ◽  
Marek Kolmer ◽  
Mads Engelund ◽  
Hiroyo Kawai ◽  
Rafal Zuzak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Electronic Properties ◽  
Dangling Bond

Starphene molecules are weakly attached to single dangling bond quantum dots, retaining the unperturbed originally designed electronic properties.

Nature of the native-defect ESR and hydrogen-dangling-bond centers in thin diamond films

1993 ◽  
Vol 48 (23) ◽  
pp. 17595-17598 ◽  
Author(s):  
H. Jia ◽  
J. Shinar ◽  
D. P. Lang ◽  
M. Pruski
Keyword(s):  
Diamond Films ◽  
Native Defect ◽  
Dangling Bond

Ge-Related Interfacial Defects in Sige Alloy Structures

1995 ◽  
Vol 405 ◽  
Author(s):  
Patricia J. Macfarlane ◽  
M. E. Zvanut ◽  
W. E. Carlos ◽  
M. E. Twigg ◽  
P. E. Thompson
Keyword(s):  
Depth Profile ◽  
Epr Spectra ◽  
Transmission Electron Micrograph ◽  
Dangling Bond ◽  
Electron Micrograph ◽  
Cross Sectional ◽  
Paramagnetic Resonance ◽  
Transmission Electron ◽  
Interfacial Defects ◽  
Electron Paramagnetic

AbstractThis paper reports etching results supporting the identification of the SG1 center as a germanium dangling bond defect at the interface between an oxide and crystalline SiGe. The presence of this defect is significant because, like an analogous center in Si-based systems, it may alter the operation of any microelectronic or micro-optical device which incorporates an interface between SiGe and an overlying oxide. The samples examined are oxygen implanted SiGe layers in which the SG1 center is believed to occur at the interface between oxide precipitates and SiGe. Because of the center's apparent relation to the oxide precipitates distributed through layers of the sample, a depth profile assists in confirming the interfacial nature of the defect. We obtain a depth profile by comparing electron paramagnetic resonance (EPR) spectra of samples etched to decreasing thickness. EPR spectra indicate that the SG1 center decreases with depth in a manner that when correlated to a cross sectional transmission electron micrograph confirms the association with SiO2 and supports its location at the SiGe/SiO2 precipitate interface.

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