Development and characterization of a high frequency low noise amplifier

2016 ◽  
Author(s):  
Ashif Reza ◽  
Anuraag Misra ◽  
Indira Chatterjee ◽  
Parnika Das
Keyword(s):  
High Frequency ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

Characterization of Low Noise Amplifier (LNA) for mm-Wave Wireless Systems

2019 ◽  
pp. 351-356
Author(s):  
Mohd Fadzil bin Ain ◽  
Mohamad Faiz bin Mohamed Omar ◽  
Roslina bt. Hussin ◽  
Zainal Arifin bin Ahmad ◽  
Intan Sorfina Zainal Abidin ◽  
...  
Keyword(s):  
Wireless Systems ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

2005 ◽  
Vol 40 (3) ◽  
pp. 726-735 ◽  
Author(s):  
Kwangseok Han ◽  
J. Gil ◽  
Seong-Sik Song ◽  
Jeonghu Han ◽  
Hyungcheol Shin ◽  
...  
Keyword(s):  
High Frequency ◽  
Thermal Noise ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Short Channel ◽  
Noise Modeling ◽  
Noise Amplifier

scholarly journals A Wideband Noise and Harmonic Distortion Canceling Low-Noise Amplifier for High-Frequency Ultrasound Transducers

Sensors ◽  
2021 ◽  
Vol 21 (24) ◽  
pp. 8476
Author(s):  
Yuxuan Tang ◽  
Yulang Feng ◽  
He Hu ◽  
Cheng Fang ◽  
Hao Deng ◽  
...  
Keyword(s):  
High Frequency ◽  
Harmonic Distortion ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Ultrasound Transducers ◽  
High Frequency Ultrasound ◽  
Front End ◽  
Noise Amplifier ◽  
Frequency Ultrasound

This paper presents a wideband low-noise amplifier (LNA) front-end with noise and distortion cancellation for high-frequency ultrasound transducers. The LNA employs a resistive shunt-feedback structure with a feedforward noise-canceling technique to accomplish both wideband impedance matching and low noise performance. A complementary CMOS topology was also developed to cancel out the second-order harmonic distortion and enhance the amplifier linearity. A high-frequency ultrasound (HFUS) and photoacoustic (PA) imaging front-end, including the proposed LNA and a variable gain amplifier (VGA), was designed and fabricated in a 180 nm CMOS process. At 80 MHz, the front-end achieves an input-referred noise density of 1.36 nV/sqrt (Hz), an input return loss (S11) of better than −16 dB, a voltage gain of 37 dB, and a total harmonic distortion (THD) of −55 dBc while dissipating a power of 37 mW, leading to a noise efficiency factor (NEF) of 2.66.

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