Characterization of third-order nonlinearity in low noise amplifier

In this paper, focuses on the design of Low Noise Amplifier circuitry in the frequency band L. This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two transistor Stage. The purpose of this research is to improve the cost of: Increase Gain - Increase circuit linearization - Create an integrative matching network for system stability. The application of this circuit can be used in wireless and GPS systems. The CMOS LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm. This circuit is designed using ADS software.

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A 0.1–1.4 GHz inductorless low-noise amplifier with 13 dBm IIP3 and 24 dBm IIP2 in 180 nm CMOS

Modern Physics Letters B ◽

10.1142/s0217984918500094 ◽

2018 ◽

Vol 32 (02) ◽

pp. 1850009 ◽

Cited By ~ 12

Author(s):

Benqing Guo ◽

Jun Chen ◽

Hongpeng Chen ◽

Xuebing Wang

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Cmos Process ◽

Voltage Gain ◽

Third Order ◽

Weak Inversion ◽

Linearization Technique ◽

The Third ◽

Noise Amplifier ◽

Second Order Nonlinearity

An inductorless noise-canceling CMOS low-noise amplifier (LNA) with wideband linearization technique is proposed. The complementary configuration by stacked NMOS/PMOS is employed to compensate second-order nonlinearity of the circuit. The third-order distortion of the auxiliary stage is also mitigated by that of the weak inversion transistors in the main path. The bias and scaling size combined by digital control words are further tuned to obtain enhanced linearity over the desired band. Implemented in a 0.18 [Formula: see text]m CMOS process, simulated results show that the proposed LNA provides a voltage gain of 16.1 dB and a NF of 2.8–3.4 dB from 0.1 GHz to 1.4 GHz. The IIP3 and IIP2 of 13–18.9 and 24–40 dBm are obtained, respectively. The circuit core consumes 19 mW from a 1.8 V supply.

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Low‐power inductorless wideband SFBB balun low noise amplifier with noise reduction and third‐order transconductance optimization

Microwave and Optical Technology Letters ◽

10.1002/mop.32545 ◽

2020 ◽

Vol 62 (12) ◽

pp. 3864-3868

Author(s):

Shashank Tiwari ◽

Jayanta Mukherjee

Keyword(s):

Low Power ◽

Noise Reduction ◽

Low Noise ◽

Low Noise Amplifier ◽

Third Order ◽

Noise Amplifier

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Broadband GaAs pHemt LNA design for T/R module application

Vietnam Journal of Science and Technology ◽

10.15625/0866-708x/54/5/6978 ◽

2016 ◽

Vol 54 (5) ◽

pp. 584

Author(s):

Phong Dai Le ◽

Vu Duy Thong ◽

Pham Le Binh

Keyword(s):

Noise Figure ◽

Low Noise ◽

Low Noise Amplifier ◽

Small Signal Gain ◽

Small Signal ◽

Third Order ◽

Wide Bandwidth ◽

Fully Integrated ◽

Three Stages ◽

Noise Amplifier

In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third order interception point (OIP3) is over 30 dBm and the 1 dB compression point (P1 dB) is 16 dBm at the output.

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