Fabrication of sub-micrometer surface structures on sapphire substrate for GaN-based light-emitting diodes by metal contact printing method

2011 ◽  
Author(s):  
Yi-Ta Hsieh ◽  
Wei-Ru Chen ◽  
An-Ru Lin ◽  
Yung-Chun Lee ◽  
Hung-Yi Lin
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Surface Structures ◽  
Metal Contact ◽  
Contact Printing ◽  
Light Emitting ◽  
Printing Method

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Light-Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect

Small ◽  
2015 ◽  
Vol 12 (2) ◽  
pp. 161-168 ◽  
Author(s):  
Young-Chul Leem ◽  
Jung Su Park ◽  
Joon Heon Kim ◽  
NoSoung Myoung ◽  
Sang-Youp Yim ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
High Light ◽  
Surface Structures ◽  
Light Extraction ◽  
Light Emitting
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