In situ electrical resistivity measurement of self assembled Cu3Si nanowires on Si(111)

Author(s):  
Poh-Keong Ng ◽  
Jian-Yih Cheng ◽  
Brandon Fisher ◽  
Carmen M. Lilley
2019 ◽  
Vol 26 ◽  
pp. 251
Author(s):  
A. Theodorou ◽  
Z. Kotsina ◽  
M. Axiotis ◽  
G. Apostolopoulos

As an important part of fusion materials research, evaluation of radiation damage in fusion materials has been emphasized more than a half century. In order to improve our understanding of radiation damage in fusion materials, an upgrade has been performed of the materials irradiation facility IR2, which is located at the NCSR “Demokritos” 5.5 MV TANDEM accelerator. The upgraded facility allows irradiation at higher ion beam currents while ensuring that the target temperature remains below 10 K. It provides in-situ electrical resistivity measurements on several samples for real-time monitoring of radiation damage as well as in-situ post-irradiation annealing up to 300 K. The upgraded IR2 facility has been successfully employed in radiation damage and recovery studies of metallic materials with applications in fusion research.


2013 ◽  
Vol 49 (3) ◽  
pp. 279-283 ◽  
Author(s):  
M. Petric ◽  
S. Kastelic ◽  
P. Mrvar

The aim of this paper is the selections of proper electrode material for four-probe technique electrical resistivity measurement of aluminium and aluminium alloys. The biggest problem of electrodes is oxidation during measurement causing high contact resistance and giving wrong results. Various materials have been tested and aluminium electrodes have been chosen. Advantage of aluminium electrodes is that they are melted in specimen right after the pouring and causing no interface which is resulting with any contact resistance. The device together with measuring cell for ?in situ? measurement of electrical resistivity was developed using four-probe DC technique.


1997 ◽  
Vol 500 ◽  
Author(s):  
Y. Q. Sun ◽  
P. M. Hazzledine ◽  
D. M. Dimiduk

ABSTRACTThis paper reports experiments in which in situ electrical resistivity measurements were used to monitor the formation of dislocations in initially dislocation-free NiAl single crystals. The electrical resistivity is found to exhibit an abrupt jump at the onset of plastic yielding. This is interpreted to result from an abrupt nucleation of a massive density of dislocations at the yield point.


2005 ◽  
Vol 86 (6) ◽  
pp. 064104 ◽  
Author(s):  
Yonghao Han ◽  
Chunxiao Gao ◽  
Yanzhang Ma ◽  
Hongwu Liu ◽  
Yuewu Pan ◽  
...  

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