Correlation between impurities, defects and cell performance in semicrystalline silicon (solar cells)

Author(s):  
W.A. Doolittle ◽  
A. Rohatgi ◽  
R. Brenneman
Solar Energy ◽  
2003 ◽  
Author(s):  
Douglas S. Ruby ◽  
Saleem Zaidi ◽  
S. Narayanan ◽  
Satoshi Yamanaka ◽  
Ruben Balanga

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.


2005 ◽  
Vol 127 (1) ◽  
pp. 146-149 ◽  
Author(s):  
Douglas S. Ruby ◽  
Saleem Zaidi ◽  
S. Narayanan ◽  
Satoshi Yamanaka ◽  
Ruben Balanga

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Ryosuke Watanabe ◽  
Shuuji Abe ◽  
Satoshi Haruyama ◽  
Tatsunobu Suzuki ◽  
Mitsuo Onuma ◽  
...  

Surface texturing methods using an alkaline solution for monocrystalline Si (c-Si) solar cells have been widely accepted to improve cell performance. However, multicrystalline Si (mc-Si) cells are difficult to be texturized by alkaline etching, because the grains in the substrates are randomly oriented. In this study, we considered a HF/HNO3/H2SO4acid solution for texturing the mc-Si cells. We evaluated the morphology of the textured surfaces and the reflectance spectra from the surfaces. The deep dimple textured structures are formed on the surfaces for only 30 seconds of the acid texturing process. This behavior results from the effect of H2SO4in the solution. This process obtains up to 14.7% conversion efficiencies of the acid textured cells. These conversion efficiencies are up to 1.3 times larger than those of the mirror-etched cells.


1986 ◽  
Vol 60 (6) ◽  
pp. 2179-2181 ◽  
Author(s):  
I. Weinberg ◽  
C. Goradia ◽  
J. W. Stupica ◽  
C. K. Swartz

2003 ◽  
Vol 762 ◽  
Author(s):  
Guozhen Yuea ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Kenneth Lord ◽  
Subhendu Guha

AbstractWe have observed a significant light-induced increase in the open-circuit voltage (Voc) of mixed-phase hydrogenated silicon solar cells. In this study, we investigate the kinetics of the light-induced effects. The results show that the cells with different initial Voc have different kinetic behavior. For the cells with a low initial Voc (less than 0.8 V), the increase in Voc is slow and does not saturate for light-soaking time of up to 16 hours. For the cells with medium initial Voc (0.8 ∼ 0.95 V), the Voc increases rapidly and then saturates. Cells with high initial Voc (0.95 ∼ 0.98 V) show an initial increase in Voc, followed bya Voc decrease. All light-soaked cells exhibit a degradation in fill factor. The temperature dependence of the kinetics shows that light soaking at high temperatures causes Voc increase to saturate faster than at low temperatures. The observed results can be explained by our recently proposed two-diode equivalent-circuit model for mixed-phase solar cells.


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