Electron traps in p-type GaAsN characterized by deep-level transient spectroscopy

AbstractTwo deep levels, located at Ev+0.26eV and Ec-0.44eV, in Al-implanted n-type samples and one at Ev+0.48eV in p-type samples have been observed by the deep level transient spectroscopy. The level of is identified as the shallower aluminum-acceptor. The 1.7 MeV electron-irradiation, used as a probe to distinguish the implantation induced deep-levels, induces at least six electron traps in the n-SiC and one hole-trap in the p-type material. The peak positions of these deep-levels in DLTS spectra are quite different from those induced by Al-implantation. This result suggests that various damages are formed after heavy ion (Al) and light particle (e) irradiation.

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Deep Electron Traps in AlAs-GaAs Superlattices as Studied by Deep-Level Transient Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.27.192 ◽

1988 ◽

Vol 27 (Part 1, No. 2) ◽

pp. 192-195 ◽

Cited By ~ 7

Author(s):

Kikuo Kobayashi ◽

Masahiko Morita ◽

Norihiko Kamata ◽

Takeo Suzuki

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Electron Traps ◽

Transient Spectroscopy

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Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.279 ◽

2005 ◽

Vol 108-109 ◽

pp. 279-284 ◽

Cited By ~ 3

Author(s):

O.F. Vyvenko ◽

N.V. Bazlov ◽

M.V. Trushin ◽

A.A. Nadolinski ◽

Michael Seibt ◽

...

Keyword(s):

Electrical Properties ◽

Deep Level Transient Spectroscopy ◽

Molecular Hydrogen ◽

Deep Level ◽

Hydrogen Plasma ◽

Extended Defects ◽

Transient Spectroscopy ◽

P Type ◽

Plasma Hydrogenation ◽

Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

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Midgap electron traps in n-type GaAs epitaxial layers grown by the close-spaced vapor transport technique

Canadian Journal of Physics ◽

10.1139/p91-066 ◽

1991 ◽

Vol 69 (3-4) ◽

pp. 407-411 ◽

Cited By ~ 2

Author(s):

T. Bretagnon ◽

A. Jean ◽

P. Silvestre ◽

S. Bourassa ◽

R. Le Van Mao ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Emission Rate ◽

Deep Level ◽

Vapor Transport ◽

Epitaxial Layers ◽

Spectroscopy Technique ◽

Electron Traps ◽

Si Doped ◽

Transient Spectroscopy ◽

Transport Technique

The deep-level transient spectroscopy technique was applied to the study of deep electron traps existing in n-type GaAs epitaxial layers that were prepared by the close-spaced vapor transport technique using three kinds of sources (semi-insulator-undoped, Zn-doped and Si-doped GaAs). Two midgap electron traps labelled ELCS1 and EL2 were observed in all layers regardless of the kind of source used. In addition, the effect of the electric field on the emission rate of ELCS1 is discussed and its identification to ETX2 and EL12 is suggested.

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Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.3559739 ◽

2011 ◽

Vol 109 (6) ◽

pp. 063709 ◽

Cited By ~ 6

Author(s):

M. González ◽

A. M. Carlin ◽

C. L. Dohrman ◽

E. A. Fitzgerald ◽

S. A. Ringel

Keyword(s):

Optical Spectroscopy ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Transient Spectroscopy ◽

P Type

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Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.759 ◽

2010 ◽

Vol 645-648 ◽

pp. 759-762

Author(s):

Koutarou Kawahara ◽

Giovanni Alfieri ◽

Michael Krieger ◽

Tsunenobu Kimoto

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Reactive Ion Etching ◽

Deep Levels ◽

Total Density ◽

Ion Etching ◽

Initial Concentration ◽

Grown Sample ◽

Transient Spectroscopy ◽

P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

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Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

physica status solidi (c) ◽

10.1002/pssc.201200163 ◽

2012 ◽

Vol 9 (10-11) ◽

pp. 1992-1995 ◽

Cited By ~ 2

Author(s):

C. K. Tang ◽

L. Vines ◽

B. G. Svensson ◽

E. V. Monakhov

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Type Silicon ◽

Transient Spectroscopy ◽

P Type

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Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1297 ◽

2008 ◽

Vol 600-603 ◽

pp. 1297-1300 ◽

Cited By ~ 1

Author(s):

Yutaka Tokuda ◽

Youichi Matsuoka ◽

Hiroyuki Ueda ◽

Osamu Ishiguro ◽

Narumasa Soejima ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Electron Traps ◽

Majority Carrier ◽

Sapphire Substrates ◽

Carrier Traps ◽

Pn Junctions ◽

Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

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Deep–Level Transient Spectroscopy Studies of Czochralski–Grown N–Type Silicon

MRS Proceedings ◽

10.1557/proc-324-373 ◽

1993 ◽

Vol 324 ◽

Author(s):

Yutaka Tokuda ◽

Isao Katoh ◽

Masayuki Katayama ◽

Tadasi Hattori

Keyword(s):

Crystal Growth ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Electron Traps ◽

Cooling Period ◽

Type Silicon ◽

Transient Spectroscopy ◽

Spectroscopy Studies

AbstractElectron traps in Czochralski–grown n-type (100) silicon with and without donor annihilation annealing have been studied by deep–level transient spectroscopy. A total of eight electron traps are observed in the concentration range 1010 –1011 cm −3. It is thought that these are grown–in defects during crystal growth cooling period including donor annihilation annealing. It is suggested that two electron traps labelled A2 (Ec–0.34 eV) and A3 (Ec–0.38 eV) of these traps are correlated with oxygen–related defects. It is shown that traps A2 and A3 are formed around 400 ° C and disappear around 500–600 ° C.

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