Specific contact resistance measurements on C-Si solar cells by novel TLM method

Author(s):  
Fei Zeng ◽  
Yuan Feng ◽  
Zongcun Liang ◽  
Hui Shen
1990 ◽  
Vol 184 ◽  
Author(s):  
T. A. Gessert ◽  
T. J. Coutts

ABSTRACTThe importance of contacts to photovoltaic solar cells is often underrated mainly because the required values of specific contact resistance and metal resistivity are often thought to be relatively modest compared with those associated with very large scale integration (VLSI) applications. However, due to the adverse environmental conditions experienced by solar cells, and since many of the more efficient cells are economically advantageous only when operated under solar concentration, the requirements for solar cell contacts are sometimes more severe. For example, at one-sun operation, the upper limit in specific contact resistance is usually taken to be 10−2 Ω-cm2. However, at several hundred suns, this value should be reduced to less than 10−4 Ω-cm2. Additionally, since grid line fabrication often relies on economical plating processes, porosity and contamination issues can be expected to cause reliability and stability problems once the device is fabricated. It is shown that, in practice, these metal resistivity issues can be much more important than issues relating to specific contact resistance and that the problem is similar to that of providing stable, low resistance interconnects in VLSI. This paper is concerned with the design and fabrication of collector grids on the front of the solar cells and, although the discussion is fairly general, it will center on the particular material indium phosphide. This III-V material is currently of great importance for space application because of its resistance to the damaging radiation experienced in space.


2007 ◽  
Vol 556-557 ◽  
pp. 705-708 ◽  
Author(s):  
Yu Suzuki ◽  
Etsushi Taguchi ◽  
Shouhei Nagata ◽  
Masataka Satoh

The specific contact resistance of Al, Ti and Ni ohmic contacts to N+ implanted 3C-SiC(100) has been investigated by means of TLM method. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 1.4×1015 cm-2 at room temperature and is subsequently annealed by RF annealer at a temperature of 1400 oC for 10 min in Ar gas flow, resulting in the sheet resistance of 130 0/sq. The deposited Al layer on the annealed sample shows the extremely low specific contact resistance of about 1×10-7 0cm2. The ohmic contacts of Ti and Ni also show the specific contact resistance of 5×10-6 and 2×10-5 0cm2, respectively. The obtained specific contact resistance is proportional to the Schottky barrier height of metal cotact to n-type 3C-SiC. The annealing of Ni ohmic contact above 600 oC results in the considerable reduction of specific contact resistance due to the silicidation of Ni.


1990 ◽  
Vol 181 ◽  
Author(s):  
T.A. Gessert ◽  
T.J. Coutts

ABSTRACTThe importance of contacts to photovoltaic solar cells is often underrated mainly because the required values of specific contact resistance and metal resistivity are often thought to be relatively modest compared with those associated with very large scale integration (VLSI) applications. However, due to the adverse environmental conditions experienced by solar cells, and since many of the more efficient cells are economically advantageous only when operated under solar concentration, the requirements for solar cell contacts are sometimes more severe. For example, at one-sun operation, the upper limit in specific contact resistance is usually taken to be 10−2 Ω-cm2. However, at several hundred suns, this value should be reduced to less than 10−4 Ω-cm2. Additionally, since grid line fabrication often relies on economical plating processes, porosity and contamination issues can be expected to cause reliability and stability problems once the device is fabricated. It is shown that, in practice, these metal resistivity issues can be much more important than issues relating to specific contact resistance and that the problem is similar to that of providing stable, low resistance interconnects in VLSI. This paper is concerned with the design and fabrication of collector grids on the front of the solar cells and, although the discussion is fairly general, it will center on the particular material indium phosphide. This III-V material is currently of great importance for space application because of its resistance to the damaging radiation experienced in space.


2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.


2007 ◽  
Vol 556-557 ◽  
pp. 1027-1030 ◽  
Author(s):  
Ferdinando Iucolano ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
A. Alberti ◽  
Vito Raineri

In this work, the structural and electrical properties of Ti/Al/Ni/Au contacts on n-type Gallium Nitride were studied. An ohmic behaviour was observed after annealing above 700°C. The structural analysis showed the formation of an interfacial TiN layer and different phases in the reacted layer (AlNi, AlAu4, Al2Au) upon annealing. The temperature dependence of the specific contact resistance demonstrated that the current transport occurs through thermoionic field emission in the contacts annealed at 600°C, and field emission after annealing at higher temperatures. By fitting the data with theoretical models, a reduction of the Schottky barrier from 1.21eV after annealing at 600°C to 0.81eV at 800°C was demonstrated, together with a strong increase of the carrier concentration at the interface. The reduction of the contact resistance upon annealing was discussed by correlating the structural and electrical characteristics of the contacts.


1996 ◽  
Vol 427 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
H. Barry Harrison ◽  
Patrick W. Leech

AbstractThe continual trend in decreasing the dimensions of semiconductor devices results in a number of technological problems. One of the more significant of these is the increase in contact resistance, Rc. In order to understand and counteract this increase, Rc needs to be quantitatively modelled as a function of the geometrical and material properties of the contact. However the use of multiple semiconductor layers for ohmic contacts makes the modelling and calculation of Rc a more difficult problem. In this paper, a Tri-Layer Transmission Line Model (TLTLM) is used to analyse a MOSFET ohmic contact and gatedrain region. A quantitative assessment of the influence on Rc of important contact parameters such as the metal-silicide specific contact resistance, the silicide-silicon specific contact resistance and the gate-drain length can thus be made. The paper further describes some of the problems that may be encountered in defining Rc when the dimensions of certain types of contact found in planar devices decrease.


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