Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime

2013 ◽  
Author(s):  
Adrienne L. Blum ◽  
James S. Swirhun ◽  
Ronald A. Sinton ◽  
Fei Yan ◽  
Stanislau Herasimenka ◽  
...  
Keyword(s):  
Laboratory Study ◽  
Eddy Current ◽  
Current Measurement ◽  
Recombination Lifetime ◽  
Excess Carrier ◽  
Carrier Recombination

Interlaboratory Study of Eddy-Current Measurement of Excess-Carrier Recombination Lifetime

2014 ◽  
Vol 4 (1) ◽  
pp. 525-531 ◽  
Author(s):  
Adrienne L. Blum ◽  
James S. Swirhun ◽  
Ronald A. Sinton ◽  
Fei Yan ◽  
Stanislau Herasimenka ◽  
...  
Keyword(s):  
Eddy Current ◽  
Current Measurement ◽  
Interlaboratory Study ◽  
Recombination Lifetime ◽  
Excess Carrier ◽  
Carrier Recombination

Excess carrier recombination lifetime of bulk n-type 3C-SiC

2009 ◽  
Vol 95 (24) ◽  
pp. 242110 ◽  
Author(s):  
Vytautas Grivickas ◽  
Georgios Manolis ◽  
Karolis Gulbinas ◽  
Kęstutis Jarašiūnas ◽  
Masashi Kato
Keyword(s):  
Recombination Lifetime ◽  
Excess Carrier ◽  
Carrier Recombination

Analysis of Eddy-Current Measurement System for Residual Stress Assessment in Stainless Steel Grade 304

2015 ◽  
Vol 659 ◽  
pp. 623-627 ◽  
Author(s):  
Cherdpong Jomdecha ◽  
Isaratat Phung-On
Keyword(s):  
Residual Stress ◽  
Stainless Steel ◽  
Eddy Current ◽  
Measurement System ◽  
System Analysis ◽  
Stress Measurement ◽  
Steel Grade ◽  
Current Measurement ◽  
Residual Stress Measurement ◽  
Stress Assessment

The objective of this paper is an analysis of statistical discreteness and measurement capability of an eddy-current measurement system for residual stress assessment in stainless steel Grade 304 (SS304). Cylindrical specimens with 50 mm in diameter and 12 mm thickness were prepared to generate residual stress by Resistance Spot Welding at which the welding currents were set at 12, 14, and 16 kA. The eddy-current measurement system was including a probe with frequency range of 0.1 to 3 MHz and an eddy current flaw detector. They were performed by contacting the probe on the specimen. The measurements were performed particularly in the vicinity of heat affected zone (HAZ). In order to determine the results of the residual stress measurement, the calibration curves between static tensile stress and eddy current impedance at various frequencies were accomplished. The Measurement System Analysis (MSA) was utilized to evaluate the changed eddy-current probe impedance from residual stress. The results showed that using eddy current technique at 1 MHz for residual stress measurement was the most efficient. It can be achieved the Gauge Repeatability & Reproducibility %GR&R at 16.61479 and Number of Distinct Categories (NDC) at 8. As applied on actual butt welded joint, it could yield the uncertainty of ± 58 MPa at 95 % (UISO).

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Eddy current measurement of the wall thickness and conductivity of circular non-magnetic conductive tubes

1996 ◽  
Vol 29 (2) ◽  
pp. 103-109 ◽  
Author(s):  
Benoit de Halleux ◽  
Bruno de Limburg Stirum ◽  
Andrei I'tchelintsev
Keyword(s):  
Wall Thickness ◽  
Eddy Current ◽  
Current Measurement

Excess carrier recombination in indirect-gap GaAs1−xPx:N

1988 ◽  
Vol 110 (1) ◽  
pp. 197-204
Author(s):  
F. Koch ◽  
R. Mitdank ◽  
G. Oelgart ◽  
C. Chlupsa
Keyword(s):  
Excess Carrier ◽  
Carrier Recombination

Ultrafast Relaxation Character of Nonequilibrium Carriers in GaAs Excited by Femtosecond Laser

2006 ◽  
Vol 532-533 ◽  
pp. 572-575
Author(s):  
Ming Zhou ◽  
Dong Qing Yuan ◽  
Li Peng Liu ◽  
Hui Xia Liu ◽  
Nai Fei Ren
Keyword(s):  
Femtosecond Laser ◽  
Relaxation Curve ◽  
Refraction Index ◽  
Free Carrier ◽  
Index Of Refraction ◽  
Lattice Temperature ◽  
Pump Probe ◽  
Recombination Lifetime ◽  
Carrier Effect ◽  
Carrier Recombination

Experiment setup of femtosecond laser pump probe was established, the time resolution of time-delay setting reached 67fs. By use of femtosecond laser with width of 30fs and wavelength is 796nm the dependence of transient change of reflectivity on delayed time in GaAs was measured by pump-probe method. By calculating the change of complex index of refraction (%n), free-carrier effect, lattice-temperature and carrier recombination contributions to relaxation curve was analyzed. When the carrier density N is 1.44×1018/cm3, free-carrier contribution to refraction index %nFC is -7.33×10-4, lattice-temperature %nLT is 0.85×10-4. Based on recombination rate equation, recombination lifetime of 980ps was deduced.

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