The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices

2006 ◽  
Author(s):  
Aravind Appaswamy ◽  
Bongim Jun ◽  
Ryan Diestelhorst ◽  
Gustavo Espinel ◽  
A.P. Prakash ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Strained Si ◽  
Soi Devices

Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices

2018 ◽  
Vol 81 ◽  
pp. 112-116
Author(s):  
Teng Ma ◽  
Xuefeng Yu ◽  
Jiangwei Cui ◽  
Qiwen Zheng ◽  
Hang Zhou ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Proton Irradiation ◽  
Soi Devices

An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation

2017 ◽  
Vol 34 (7) ◽  
pp. 076104
Author(s):  
Teng Ma ◽  
Qi-Wen Zheng ◽  
Jiang-Wei Cui ◽  
Hang Zhou ◽  
Dan-Dan Su ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Soi Devices

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-57-Pr3-60
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Strained Si

The advancement of silicon-on-insulator (SOI) devices and their basic properties

2020 ◽  
Vol 23 (3) ◽  
pp. 227-252
Author(s):  
T.E. Rudenko ◽  
◽  
A.N. Nazarov ◽  
V.S. Lysenko ◽  
◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Basic Properties ◽  
Soi Devices

Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy

2004 ◽  
Vol 95 (5) ◽  
pp. 340-344 ◽  
Author(s):  
P. Dobrosz ◽  
S. J. Bull ◽  
S. H. Olsen ◽  
A. G. O'Neill
Keyword(s):  
Raman Spectroscopy ◽  
Residual Strain ◽  
Strained Si

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

scholarly journals Proton irradiation effects on GaN-based epitaxial structures

2020 ◽  
Vol 1697 ◽  
pp. 012073
Author(s):  
A A Lebedev ◽  
V Yu Davydov ◽  
A N Smirnov ◽  
I A Eliseyev ◽  
K S Davydovskaya ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Irradiation Effects

Proton irradiation induced phase transformation in Ni-Mn-Ga thin films

2021 ◽  
Vol 266 ◽  
pp. 115078
Author(s):  
R. Ning ◽  
Z.P. Yang ◽  
Z.Y. Gao ◽  
X.Z. Cao ◽  
W. Cai
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Proton Irradiation
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