Single Event Effect and Total Ionizing Dose Results of Highly Scaled Flash Memories

2013 ◽  
Author(s):  
Farokh Irom ◽  
Duc N. Nguyen ◽  
Gregory R. Allen
Keyword(s):  
Single Event ◽  
Total Ionizing Dose ◽  
Flash Memories ◽  
Single Event Effect

Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs

2013 ◽  
Vol 29 (1) ◽  
pp. 015010 ◽  
Author(s):  
Fei Tan ◽  
Ru Huang ◽  
Xia An ◽  
Weikang Wu ◽  
Hui Feng ◽  
...  
Keyword(s):  
Single Event ◽  
Total Ionizing Dose ◽  
Single Event Effect

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

2013 ◽  
Vol 28 (5) ◽  
pp. 055003
Author(s):  
Fei Tan ◽  
Xia An ◽  
Shoubin Xue ◽  
Liangxi Huang ◽  
Weikang Wu ◽  
...  
Keyword(s):  
Vertical Channel ◽  
Double Gate ◽  
Single Event ◽  
Total Ionizing Dose ◽  
Single Event Effect

Total ionizing dose and single event effect studies of a 0.25μm CMOS serializer ASIC

2007 ◽  
Author(s):  
Chu Xiang ◽  
Tiankuan Liu ◽  
Cheng-An Yang ◽  
Ping Gui ◽  
Wickham Chen ◽  
...  
Keyword(s):  
Single Event ◽  
Total Ionizing Dose ◽  
Single Event Effect

Effects of total ionizing dose on single event effect sensitivity of FRAMs

2019 ◽  
Vol 95 ◽  
pp. 1-7
Author(s):  
Qinggang Ji ◽  
Jie Liu ◽  
Dongqing Li ◽  
Tianqi Liu ◽  
Bing Ye ◽  
...  
Keyword(s):  
Single Event ◽  
Total Ionizing Dose ◽  
Single Event Effect

scholarly journals Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1232
Author(s):  
Chen Chong ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Xiaocong Wu
Keyword(s):  
Field Effect Transistor ◽  
Silicon On Insulator ◽  
Dose Effect ◽  
Single Event ◽  
Total Ionizing Dose ◽  
Irradiation Effects ◽  
Single Event Effect ◽  
Effect Transistor ◽  
Different Doses ◽  
Rate Threshold

Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure is a device with development potential. The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. At the same time, simulations prove that selecting the proper thickness of the buried oxide (BOX) layer can effectively reduce the influence of the TID effect. This provides a way of direction and method for research on the irradiation effects on the device in the future.

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

2018 ◽  
Vol 27 (8) ◽  
pp. 086103 ◽  
Author(s):  
Ya-Nan Yin ◽  
Jie Liu ◽  
Qing-Gang Ji ◽  
Pei-Xiong Zhao ◽  
Tian-Qi Liu ◽  
...  
Keyword(s):  
Floating Gate ◽  
Single Event ◽  
Total Ionizing Dose ◽  
Single Event Effect
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