scholarly journals Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1232
Author(s):  
Chen Chong ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Xiaocong Wu
Keyword(s):  
Field Effect Transistor ◽  
Silicon On Insulator ◽  
Dose Effect ◽  
Single Event ◽  
Total Ionizing Dose ◽  
Irradiation Effects ◽  
Single Event Effect ◽  
Effect Transistor ◽  
Different Doses ◽  
Rate Threshold

Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure is a device with development potential. The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. At the same time, simulations prove that selecting the proper thickness of the buried oxide (BOX) layer can effectively reduce the influence of the TID effect. This provides a way of direction and method for research on the irradiation effects on the device in the future.

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

2014 ◽  
Vol 23 (4) ◽  
pp. 046104 ◽  
Author(s):  
Shao-An Yan ◽  
Ming-Hua Tang ◽  
Wen Zhao ◽  
Hong-Xia Guo ◽  
Wan-Li Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Single Event ◽  
Heavy Ion Irradiation ◽  
Single Event Effect ◽  
Effect Transistor

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

scholarly journals Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

2003 ◽  
Vol 93 (2) ◽  
pp. 1230-1240 ◽  
Author(s):  
M. D. Croitoru ◽  
V. N. Gladilin ◽  
V. M. Fomin ◽  
J. T. Devreese ◽  
W. Magnus ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Effect Transistor

scholarly journals Indication of the Coronavirus Model Using a Nanowire Biosensor

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 50
Author(s):  
Vladimir Generalov ◽  
Olga Naumova ◽  
Dmitry Shcherbakov ◽  
Alexander Safatov ◽  
Boris Zaitsev ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Charge ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Nanowire Surface ◽  
Before And After ◽  
Effect Transistor ◽  
Current Value ◽  
Silicon On Insulator Technology

The presented results indicate virus-like particles of the coronavirus (CVP) using a nanowire (NW) biosensor based on silicon-on-insulator technology. In the experiment, we used suspensions of CVP and of specific antibodies to the virus. Measurements of the current value of the field-effect transistor before and after the introduction of the CVP on the surface of the nanowire were performed. Results showed antibody + CVP complexes on the phase section with the surface of the nanowire modulate the current of the field-effect transistor; CVP has an electrically positive charge on the phase section “nanowire surface-viral suspension»; antibody + CVP complexes have an electrically negative charge on the phase section “nanowire surface-viral suspension”; the sensitivity of the biosensor is made up of 10−18 M; the time display was 200–300 s.

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