On-chip terahertz signal generators for near-field biosensor arrays

2016 ◽  
Author(s):  
R. Al Hadi ◽  
Y. Zhao ◽  
M.-C. F. Chang ◽  
X. Cheng ◽  
J. C. M. Hwang
Keyword(s):  
Near Field ◽  
Biosensor Arrays ◽  
On Chip ◽  
Terahertz Signal

scholarly journals Demonstration of an integrated nanophotonic chip-scale alkali vapor magnetometer using inverse design

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Yoel Sebbag ◽  
Eliran Talker ◽  
Alex Naiman ◽  
Yefim Barash ◽  
Uriel Levy
Keyword(s):  
Spatial Resolution ◽  
Near Field ◽  
Computer Assisted ◽  
Experimental Characterization ◽  
Optical Isolation ◽  
New Concepts ◽  
On Chip ◽  
The Cost ◽  
Micrometer Scale

AbstractRecently, there has been growing interest in the miniaturization and integration of atomic-based quantum technologies. In addition to the obvious advantages brought by such integration in facilitating mass production, reducing the footprint, and reducing the cost, the flexibility offered by on-chip integration enables the development of new concepts and capabilities. In particular, recent advanced techniques based on computer-assisted optimization algorithms enable the development of newly engineered photonic structures with unconventional functionalities. Taking this concept further, we hereby demonstrate the design, fabrication, and experimental characterization of an integrated nanophotonic-atomic chip magnetometer based on alkali vapor with a micrometer-scale spatial resolution and a magnetic sensitivity of 700 pT/√Hz. The presented platform paves the way for future applications using integrated photonic–atomic chips, including high-spatial-resolution magnetometry, near-field vectorial imaging, magnetically induced switching, and optical isolation.

scholarly journals Direct quantification of topological protection in symmetry-protected photonic edge states at telecom wavelengths

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Sonakshi Arora ◽  
Thomas Bauer ◽  
René Barczyk ◽  
Ewold Verhagen ◽  
L. Kuipers
Keyword(s):  
Near Field ◽  
Edge States ◽  
Quantum Networks ◽  
Hall Effects ◽  
Upper Limits ◽  
On Chip ◽  
Symmetry Protected ◽  
Topological Robustness ◽  
Direct Quantification ◽  
Sub Wavelength

AbstractTopological on-chip photonics based on tailored photonic crystals (PhCs) that emulate quantum valley-Hall effects has recently gained widespread interest owing to its promise of robust unidirectional transport of classical and quantum information. We present a direct quantitative evaluation of topological photonic edge eigenstates and their transport properties in the telecom wavelength range using phase-resolved near-field optical microscopy. Experimentally visualizing the detailed sub-wavelength structure of these modes propagating along the interface between two topologically non-trivial mirror-symmetric lattices allows us to map their dispersion relation and differentiate between the contributions of several higher-order Bloch harmonics. Selective probing of forward- and backward-propagating modes as defined by their phase velocities enables direct quantification of topological robustness. Studying near-field propagation in controlled defects allows us to extract upper limits of topological protection in on-chip photonic systems in comparison with conventional PhC waveguides. We find that protected edge states are two orders of magnitude more robust than modes of conventional PhC waveguides. This direct experimental quantification of topological robustness comprises a crucial step toward the application of topologically protected guiding in integrated photonics, allowing for unprecedented error-free photonic quantum networks.

On-Chip Terahertz Near-Field Generation/Detection Scheme

2018 ◽  
Author(s):  
Dmitry S. Bulgarevich ◽  
Yusuke Akamine ◽  
Hideaki Kitahara ◽  
Valynn Katrine P. Mag-Usara ◽  
Hiroyuki Kato ◽  
...  
Keyword(s):  
Near Field ◽  
Detection Scheme ◽  
Field Generation ◽  
On Chip

Atomic force microscopy imaging using a tip-on-chip: Opening the door to integrated near field nanotools

2010 ◽  
Vol 81 (9) ◽  
pp. 093707 ◽  
Author(s):  
J. Hayton ◽  
J. Polesel-Maris ◽  
R. Demadrille ◽  
M. Brun ◽  
F. Thoyer ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Near Field ◽  
Microscopy Imaging ◽  
Force Microscopy ◽  
Atomic Force ◽  
Atomic Force Microscopy Imaging ◽  
On Chip

Die-level, post-CMOS processes for fabricating open-gate, field-effect biosensor arrays with on-chip circuitry

2008 ◽  
Vol 18 (11) ◽  
pp. 115032 ◽  
Author(s):  
S R Chang ◽  
C H Chang ◽  
J S Lin ◽  
S C Lu ◽  
Y T Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Biosensor Arrays ◽  
On Chip ◽  
Cmos Processes

scholarly journals Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics

2020 ◽  
Author(s):  
Georgy Ermolaev ◽  
D. Grudinin ◽  
Y. Stebunov ◽  
K. Voronin ◽  
Vasyl Kravets ◽  
...  
Keyword(s):  
Transition Metal ◽  
Optical Anisotropy ◽  
Near Infrared ◽  
Near Field ◽  
Transition Metal Dichalcogenides ◽  
Next Generation ◽  
Infrared Wavelength ◽  
Infrared Spectral ◽  
Metal Dichalcogenides ◽  
On Chip

Abstract Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Walls interaction. To do this, we carried out a correlative far- and near-field characterization validated by first-principle calculations that reveals an unprecedented birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this outstanding anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.

scholarly journals Spatial mapping of optical modes in plasmonic nanoantenna by scanning tunneling microscopy

2021 ◽  
Vol 2015 (1) ◽  
pp. 012139
Author(s):  
V A Shkoldin ◽  
D V Lebedev ◽  
A M Mozharov ◽  
D V Permyakov ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Near Field ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Inelastic Electron ◽  
Ambient Conditions ◽  
Tunneling Microscopy ◽  
Theoretical Predictions ◽  
Optical Modes ◽  
On Chip

Abstract Using of inelastic electron tunnelling is very promising approach to study of subwavelength photons and plasmons sources. Such sources are very important for improving of on-chip data processing. One of the ways for development of efficient and compact optical electrically-driven sources is using of nanoantenna placed into the tunnel junction. In this work, singe optical nanoantenna was investigated under ultra-high vacuum and ambient conditions. Photon maps of nanoantenna excited under scanning tunnel microscope tip was observed and the obtained results was compared with the theoretical predictions of electromagnetic near-field distribution.

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