Diffusion and activation of Boron and Phosphorus in preamorphized and crystalline Germanium using ultra fast spike anneal

2009 ◽  
Author(s):  
V. Mazzocchi ◽  
X. Pages ◽  
M. Py ◽  
J P Barnes ◽  
K. Vanormelingen ◽  
...  
Keyword(s):  
Spike Anneal ◽  
Fast Spike ◽  
Crystalline Germanium

Quenchable high-pressure phases from non-crystalline germanium

1977 ◽  
Vol 23 (1) ◽  
pp. 13-19 ◽  
Author(s):  
J.B. Clark ◽  
Frank Dachille ◽  
Masahiko Shimada
Keyword(s):  
High Pressure ◽  
Crystalline Germanium

scholarly journals Diffusion of silicon in crystalline germanium

2006 ◽  
Vol 21 (6) ◽  
pp. 758-762 ◽  
Author(s):  
H H Silvestri ◽  
H Bracht ◽  
J Lundsgaard Hansen ◽  
A Nylandsted Larsen ◽  
E E Haller
Keyword(s):  
Crystalline Germanium

High-pressure water vapor treatment for poly-crystalline germanium thin films

2012 ◽  
Vol 358 (17) ◽  
pp. 2107-2109 ◽  
Author(s):  
Takeru Sagisaka ◽  
Takahiro Takatsu ◽  
Masao Isomura
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Water Vapor ◽  
Pressure Water ◽  
Vapor Treatment ◽  
Crystalline Germanium

Phosphorus Implant For S/D Extension Formation: Diffusion And Activation Study After Spacer And Spike Anneal

2006 ◽  
Author(s):  
S. H. Yeong ◽  
B. Colombeau ◽  
F. Benistant ◽  
M. P. Srinivasan ◽  
C. P. A. Mulcahy ◽  
...  
Keyword(s):  
Spike Anneal

Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing

2008 ◽  
Vol 573-574 ◽  
pp. 207-228 ◽  
Author(s):  
Silke Paul ◽  
Wilfried Lerch
Keyword(s):  
Process Parameters ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Peak Temperature ◽  
Historical Overview ◽  
Temperature Ramp ◽  
Stabilization Temperature ◽  
Spike Anneal

This work presents a summary on the use of rapid thermal processing for implant annealing. It gives a short historical overview of rapid thermal processing systems and the first implant anneal processes on these newly developed tools. We then looked in detail on the soak anneal and spike anneal processes and the influence of certain process parameters. For the soak anneal influences of the ambient, either oxidizing or nitriding, were evaluated. The results of spike anneal processes are influenced by the pre-stabilization temperature, ramp-up and ramp-down rate, peak temperature, and gaseous ambient. The need for shallow, abrupt and highly activated junctions leads to co-implantation of species like fluorine or carbon in conjunction with pre-amorphization. Nowadays, combinations of spike and millisecond annealing as well as millisecond annealing alone are in the focus.

hopping noise in crystalline germanium

1995 ◽  
Vol 93 (10) ◽  
pp. 829-832 ◽  
Author(s):  
I. Shlimak ◽  
Y. Kraftmakher ◽  
R. Ussyshkin ◽  
K. Zilberberg
Keyword(s):  
Crystalline Germanium

Electrodeposition of Crystalline Germanium on Glass

2021 ◽  
Vol MA2021-02 (21) ◽  
pp. 1860-1860
Author(s):  
Hannah Bartels ◽  
Vincent Vermeulen ◽  
Nathanael Downes ◽  
Stephen Maldonado
Keyword(s):  
Crystalline Germanium
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