Mechanical properties of transformer insulations under DC bias condition

Author(s):  
Jing Wu ◽  
Jie Xu ◽  
Weiyan Zheng ◽  
Ming Jin ◽  
Xueqian Huang ◽  
...  
Author(s):  
T. Hatakeyama ◽  
K. Fushinobu ◽  
K. Okazaki

Experimental works about the device interactions between nMOS and pMOS in bulk Si CMOS were performed. In the bulk Si CMOS, in the case that the distance between two MOSFETs is not enough, it is important to consider the risk of the device interactions between nMOS and pMOS. In this work, we fabricated bulk Si CMOS, in which the distance between pMOS and nMOS can be variable. And we observed the characteristics of the device operation by using fabricated CMOS under the dc bias condition. In this research, we focused on the leakage current between two MOSFETs in CMOS inverter depending on the distance between two MOSFETs, applied voltage and temperature. Experimental results showed that our fabricated CMOS shows quite small leakage current and the leakage current is less than 1% compared to CMOS on state current even with small distance between two MOSFETs at the high voltage condition and the high temperature condition.


1998 ◽  
Vol 12 (29n30) ◽  
pp. 1217-1226 ◽  
Author(s):  
P. D. Shaju ◽  
V. C. Kuriakose

The soliton creation and annihilation processes are demonstrated numerically, in the long overlap Josephson junction in the first, second and third Zero-Field Step (ZFS) cases, using the perturbed sine-Gordon (sG) equation in the presence of periodic point-like weak inhomogeneities. In all the ZFS cases, the created soliton is found to be in a bunched (congealed) mode with the other solitons. The I–V characteristics, corresponding to the kink dynamics under a dc bias, at which the creation and annihilation phenomena demonstrated is compared with that of an anti-kink dynamics under the same bias condition.


2012 ◽  
Vol 27 (2) ◽  
pp. 953-963 ◽  
Author(s):  
J. Muhlethaler ◽  
J. Biela ◽  
J. W. Kolar ◽  
A. Ecklebe
Keyword(s):  
Dc Bias ◽  

Author(s):  
Adam Ruszczyk ◽  
Krzysztof Sokalski

Purpose – The purpose of this paper is to present modelling of power losses dependences on temperature in soft magnetic materials exposed to non-sinusoidal flux waveforms and DC bias condition. Design/methodology/approach – Scaling theory allows the power loss density to be derived in the form of a general homogeneous function, which depends on the peak-to-peak of the magnetic inductance ΔB, frequency f, DC bias HDC and temperature T. The form of this function has been generated through the Maclaurin expansion with respect to scaled frequency, which suit very much for the Bertotti decomposition. The parameters of the model consist of expansion coefficients, scaling exponents, parameters of DC bias mapping, parameters of temperature factor and tuning exponents. Values of these model parameters were estimated on the basis of measured data of total power density losses. Findings – The main finding of the paper is a unified methodology for the derivation of a mathematical model which satisfactorily describes the total power density losses versus ΔB, f, HDC, and T in soft magnetic devices. Research limitations/implications – Still the derived method does not describe dependences of the power density loss on shape and size of considered sample. Practical implications – The most important achievement is of the practical use. The paper is useful for device designers. Originality/value – This paper presents the algorithm which enables us to calculate core losses while the temperature is changing. Moreover, this method is effective regardless of soft magnetic material type and the flux waveforms as well as the DC bias condition. The application of scaling theory in the description of energy losses in soft magnetic materials justifies that soft magnetic materials are scaling invariant systems.


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