Effect of bipolar pulsed dc bias on the mechanical properties of silicon oxide thin film by plasma enhanced chemical vapor deposition

2011 ◽  
Vol 11 (4) ◽  
pp. 1107-1110 ◽  
Author(s):  
Su B. Jin ◽  
Sung I. Kim ◽  
Yoon S. Choi ◽  
In S. Choi ◽  
Jeon G. Han
2008 ◽  
Vol 255 (5) ◽  
pp. 2859-2863 ◽  
Author(s):  
Zhi-Yang Li ◽  
Fuchun Xu ◽  
Qi-Hui Wu ◽  
Jing Li

2019 ◽  
Vol 12 (6) ◽  
pp. 065505 ◽  
Author(s):  
Phimolphan Rutthongjan ◽  
Misaki Nishi ◽  
Li Liu ◽  
Shota Sato ◽  
Yuya Okada ◽  
...  

1991 ◽  
Vol 30 (Part 2, No. 1A) ◽  
pp. L35-L38 ◽  
Author(s):  
Takahisa Ushida ◽  
Kazutoshi Higashiyama ◽  
Izumi Hirabayashi ◽  
Shoji Tanaka

2015 ◽  
Vol 645-646 ◽  
pp. 400-404
Author(s):  
Zong Lei Jiao ◽  
Jian Zhu

The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm、4.5μm、9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa; 4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa; 9μm SiC thin film: E=167.96Gpa, H=9.48Gpa


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