LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

2019 ◽  
Author(s):  
J. Rimmelspacher ◽  
R. Weigel ◽  
A. Hagelauer ◽  
V. Issakov
Keyword(s):  
Cmos Technology ◽  
60 Ghz ◽  
Lc Tank ◽  
Dual Core ◽  
Differential Inductor ◽  
Soi Cmos

A 52-to-67 GHz dual-core push–push VCO in 40-nm CMOS

2018 ◽  
Vol 10 (7) ◽  
pp. 783-793 ◽  
Author(s):  
Vadim Issakov ◽  
Johannes Rimmelspacher ◽  
Saverio Trotta ◽  
Marc Tiebout ◽  
Amelie Hagelauer ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Frequency Tuning ◽  
Second Harmonic ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Voltage Controlled Oscillator ◽  
60 Ghz ◽  
Chip Area ◽  
Wave Radar ◽  
Dual Core

AbstractWe present a continuously tunable 52-to-67 GHz push–push dual-core voltage-controlled oscillator (VCO) in a 40 nm bulk complementary metal–oxide–semiconductor (CMOS) technology. The circuit is suitable for 60 GHz frequency-modulated-continuous-wave radar applications requiring a continuously tunable ultra-wide modulation bandwidth. The LC-tank inductor is used to couple the two VCO cores. The fundamental frequency of the VCO can be tuned from 26 to 33.5 GHz, which corresponds to a frequency tuning range of 25%. The second harmonic is extracted in a non-invasive way using a transformer. The primary side acts simultaneously as a second harmonic filter. The VCO achieves in measurement a low phase noise of −91.8 dBc/Hz at 1 MHz offset at 62 GHz and an output power of −20 dBm. The VCO including buffers dissipates in the dual-core operation mode 60 mA from a single 1.1 V supply and consumes a chip area of 0.58 mm2.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

A 60 GHz reconfigurable active phase shifter based on a vector modulator in 65 nm CMOS technology

2016 ◽  
Vol 8 (3) ◽  
pp. 399-404 ◽  
Author(s):  
Boris Moret ◽  
Nathalie Deltimple ◽  
Eric Kerhervé ◽  
Baudouin Martineau ◽  
Didier Belot
Keyword(s):  
Phase Shift ◽  
Phase Shifter ◽  
Complementary Metal Oxide Semiconductor ◽  
Active Phase ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
60 Ghz ◽  
Semiconductor Technology ◽  
Vector Modulator ◽  
Active Phase Shifter

This paper presents a 60 GHz reconfigurable active phase shifter based on a vector modulator implemented in 65 nm complementary metal–oxide–semiconductor technology. This circuit is based on the recombination of two differential paths in quadrature. The proposed vector modulator allows us to generate a phase shift between 0° and 360°. The voltage gain varies between −13 and −9 dB in function of the phase shift generated with a static consumption between 26 and 63 mW depending on its configuration.

A 28Gb/s 4-tap FFE/15-tap DFE serial link transceiver in 32nm SOI CMOS technology

2012 ◽  
Author(s):  
John Bulzacchelli ◽  
Troy Beukema ◽  
Daniel Storaska ◽  
Ping-Hsuan Hsieh ◽  
Sergey Rylov ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Serial Link ◽  
Serial Link Transceiver ◽  
Soi Cmos
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